圖案化藍寶石基板與電鍍銅技術應用於氮化鎵發光二  極體之研究

本論文研製之以簡單低成本之濕式化學蝕刻法，對藍寶石(sapphire, Al2O3)基板進行大深度之圖形化蝕刻，蝕刻溶液為硫酸(H2SO4)與磷酸(H3PO4)以3:1 體積比例混合的溶液。使用多層金屬與二氧化矽(SiO2)兩種不同的蝕刻遮罩，探討遮罩對蝕刻速率、深度、品質的影響。沉積SiO2 遮罩的溫度會影響蝕刻後sapphire 基板的蝕刻深度，300oC 為較佳的沉積溫度，藉此可以讓蝕刻深度達到37.2 μm。多層金屬遮罩因為其中的鉻(Cr)金屬，對蝕刻液的阻擋效力不彰，因此無法達到蝕刻深度方面的要求。我們為了要使光取出有更好的效果產生、而使用了微米與奈米結合的圖案化藍寶石基板，微米圖案化藍寶石基板使用了黃光製程、在過程中分別做了三組實驗，(1)Ni結球遮罩實驗、(2)SiO2遮罩實驗、(3)SiO2 奈米球實驗， Ni結球遮罩實驗因SiO2 過厚使遮罩無法定義出圖形， SiO2遮罩實驗雖有蝕刻出圖形，但SiO2不夠均勻、而使用了SiO2 奈米球，SiO2奈米球實驗雖可在藍寶石基板上塗佈，但其無法與基板緊粘，造成蝕刻時、易被蝕刻液拔起，以致於要提高回火溫度。但由於目前的LED 在光源應用時所產生會遇到有關熱的問題，LED 所產生的熱不僅會影响到發光效率及其使用的壽命，還會產生所謂的紅移現象、為了改善散熱的問題我們使用到電鍍銅這一項技術。且這一項技術有使用到反射鏡可以同時增加LED 的光取出，也可以對LED 的散熱有較好的效果出現。在這一實驗中分別鍍出不同厚度的銅、有分成3 種厚度326μm ±20μm、716μm ±50μm、867μm ±50μm、可以看出對光的影响和散熱的效果。

關鍵字

發光二極體；圖案化藍寶石基板；電鍍銅

並列摘要

The wet etching law with the simple low cost that this thesis developed,to the sapphire (sapphire, Al2O3) The patterned that the substrate carries on the high depth is etched, it is a sulphuric acid (H2SO4) to etch the solution And the phosphoric acid (H3PO4) With the solution that the proportion of volume mixed of 3:1. Use multi-layer metal and oxidize (SiO2) Two kinds of different ones etch mask, Probe into mask to the influence etching the speed, depth, quality. Etching depth of sapphire substrate after the temperature of SiO2 mask will be influenced and etched to deposit, 300oC for good temperature of depositting, can is it etch depth reach 37.2　m. Because the chromium among them of metal mask (Cr) Metal, to etch the to resist a service from of liquid and does not raise apparently ing, so unable to reach the demand for etching the depth. We, in order to make Light Extraction Efficiency have better results to emerge, and has used patterned sapphire substrate that micron combined with nanometer, microns of patterned sapphire substrate use yellow light process, Have used Ni to form ball mask, SiO2 mask, SiO2 nano sphere separately during the course, Ni form ball mask pass with SiO2 thick to make mask to be unable to is it produce patterned to define, Although SiO2 mask etches out the patterned, but has used SiO2 nano sphere because SiO2 is not even enough, SiO2 nano sphere is still in the experiment. But because present LED produced and will meet the problem about heat when the light source is used, what LED produces is hot to not merely know the shadow? Get give out light efficiency and life-span that use, can produce a so-called one red shift phenomenon, for improve question that dispel the heat we use electroplating copper facing this technology. And this technology has light that can increase LED at the same time while using the reflection mirror to take out, can there are better results to the heat dissipation of LED too to appear. Plate out the copper of different thickness separately in this experiment, divide into 3 kinds of thickness 326　m ±20 m, 716　m ±50 m, 867　m ±50 m, Can find out it to mere influence and result dispelling the heat.

並列關鍵字

Light Emitting Diodes ； Patterned Sapphire Substrate ； Copper Electroplating

參考文獻

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[2]. 汪信呈，”使用新式的圖案化藍寶石基板來有效的改善氮化鎵系列的發光二極體”，光電科學與工程研究所碩士論文，國立成功大學，2008

[1] Jeff Y. Tsao, “Solid-state Lighting Lamps, Chips, and Materials for Tomorrow”, IEEE Circuit & Devices Magazine, vol. 20, issue 3, pp. 28~37, 2004.

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圖案化藍寶石基板與電鍍銅技術應用於氮化鎵發光二極體之研究

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