多值電路設計與應用

Design and Application of Multiple-Valued Circuit

籃耿晃(Geng-Haung Lan)

指導教授 ： 甘廣宙

崑山科技大學/工程學院/電子工程研究所/碩士(2009年)

摘要

本篇論文我們的研究方向以使用負微分電阻元件(Negative-Differential-Resistance；NDR)為設計及應用電路的基礎。其整體架構是利用金氧半場效電晶體(MOSFET)與異質接面電晶體(HBT)所組成，我們將其架構稱之為MOS-HBT-NDR元件。而因其電流-電壓曲線(I-V Curve)呈現N型或Λ型的特性，所以可稱之為N型或Λ型MOS-HBT-NDR元件。我們使用數個NDR元件以串聯或是並聯方式作為驅動(Driver)電路，即可獲得數個峰值及谷值，而因I-V Curve具有摺疊特性，此特性可降低複雜性及減少電路使用元件，故利用此特性及NDR元件來設計多值記憶器、解碼器及多工器電路。

關鍵字

負微分電阻元件 ； 多值記憶器 ； 多工器 ； 解碼器

並列摘要

In this paper, the direction of our research to the use of negative differential resistance device (Negative-Differential-Resistance; NDR) for the design and application of the basis of the circuit. The overall framework consists of metal-oxide halftime effect transistors (MOSFET) and Heterojunction transistor (HBT), we will call its structure MOS-HBT-NDR. And current - voltage curve (IV Curve) show N-type or a Λ-type features, it can be called N-type or a Λ-type MOS-HBT-NDR. We use a number of NDR devices in series or in parallel as a driver circuit, can obtain a number of peak and valley, which has folded due to IV Curve features, this feature can reduce the complexity and reduce the use of circuit components, Therefore, use this NDR characteristics and components to design more than multiple- valued memory, decoders and multiplexer circuit.

並列關鍵字

negative-differential-resistance ； multiple- valued memory ； decoder ； multiplexer

參考文獻

[1] R. Tsu and L.Easki, ”Tunneling in a finite superlattice”, Appl.Phys.Lett.22,

[2] C. Y Wu and K.N.Lai, “Integrated Λ-type differential negative resistance

MOSFET device”, IEEE J.Solid-State Circuits, vol.14,

[3] C. Seabaugh et al, “Nine-state resonant tunnelingdiode memory,”IEEE

Electron Device Lett, vol. 13, pp.479-481, 1992.