量子點發光二極體之電洞傳輸能力以及元件表現改善研究

Improvement in hole transporting ability and device performance in quantum dot light emitting diodes

邱培桀(Pei-Chieh Chiu)

指導教授 ： 楊勝雄

國立交通大學/光電學院/光電系統研究所/碩士(2020年)

摘要

本研究採用一種新型添加劑BYK-P105摻入聚（3,4-乙烯二氧噻吩）：聚苯乙烯磺酸（PEDOT：PSS）以改善電洞傳輸能力以及量子點發光二極體（QLEDs）之元件性能。此外，乙氧基化聚乙烯亞胺（PEIE）改質之氧化鋅奈米顆粒（ZnO NPs）作為電子傳輸層則首次應用於常規型QLED並達到高的元件效率。以元件架構為ITO/PEDOT：PSS+BYK-P105/PVK/CdSe@ZnS QDs/ZnO NPs/PEIE/LiF/Al之最優化元件獲得139,909 cd/m2的極高亮度和27.2 cd/A的電流效率並顯示出具前途的發光應用性。

關鍵字

量子點發光二極體 ； 電洞傳輸層 ； 氧化鋅奈米顆粒 ； 乙氧基化聚乙烯亞胺

並列摘要

A novel additive BYK-P105 was adopted to blend into poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) to improve the hole transporting ability as well as device performance in quantum dot light emitting diodes (QLEDs) in this research. In addition, the polyethyleneimine ethoxylated (PEIE)-modified zinc oxide nanoparticles (ZnO NPs) as the electron transporting layer was firstly applied in regular-type QLEDs for achieving high device efficiency. A very high brightness of 139,909 cd/m2 and current efficiency of 27.2 cd/A were obtained from the optimized device with the configuration of ITO/PEDOT:PSS+BYK-P105/PVK/CdSe@ZnS QDs/ZnO NPs/PEIE/LiF/Al that shows promising usage in light-emitting applications.

並列關鍵字

quantum dot light emitting diodes ； hole transport layer ； zinc oxide nanoparticles ； polyethyleneimine ethoxylated

參考文獻

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