利用原子層磊晶術成長氧化鋅薄膜於藍寶石基板上及其退火效應

Growth and annealing effect of the ZnO thin film on c-sapphire by Atomic Layer Deposition

林建輝(Jian-Huei Lin)

指導教授 ： 謝文峰

國立交通大學/電機學院/光電工程系所/碩士(2009年)

https://doi.org/10.6842/NCTU.2009.00306

摘要

利用原子層磊晶術成長在藍寶石基板的氧化鋅薄膜被我們詳細的研究與了解. 薄膜的表面是十分得平坦的. 在薄膜的成長中,沿著C軸堆疊在藍寶石基板的氧化鋅占了絕大多數. 而氧化鋅和藍寶石基板之間比較沒有像利用脈衝雷射蒸鍍製程和有機金屬化學氣相沉積法成長的氧化鋅那樣, 介面之間有旋轉了三十度. 而是直接向上成長 .占少部分大約百分之三的有旋轉的部分, 經過退火處理之後, 這種結構幾乎可以完全消除. 氧化鋅的晶體結構可以在退火處理大大的改善. 經過退火之後, 壘層缺陷是氧化鋅薄膜最主要的結構缺陷.

關鍵字

原子層磊晶術 ； 氧化鋅 ； 薄膜 ； 退火處理

並列摘要

Structural characteristics of the ZnO epitaxial films grown on c-plane sapphire by atomic layer deposition method were thoroughly studied. The morphology of thin film is smooth. The in-plane axes of the c-plane oriented ZnO layers are predominantly aligned with that of the sapphire substrate, yielding the relationship of . The minor orientation with a 30° in-plane twist configuration, i.e. , which is more commonly observed in ZnO films grown by metal organic chemical vapor deposition, pulsed laser deposition and other methods, only amounts to less than 3% and can be eliminated by thermal annealing. The structure of the ZnO epi-films exhibits significantly improvement upon thermal annealing and intrinsic types of basal plan stacking faults are the predominant structural defects in the ZnO after thermal treatment.

並列關鍵字

ZnO ； thin film ； c-sapphire ； Atomic Layer Deposition ； annealing effect

參考文獻

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