在之前,我們團隊已經成功以結構 ITO / PEDOT:PSS / MAPbBr3 / TPBi / LiF / Ag製造出元件面積 0.09 cm2、外部量子效率 0.6%的鈣鈦礦發光二極體。但是在製作大面積上一直無法有所突破,因此本文針對元件進行優化,調整電子注入層、電子傳輸層、陰電極銀的厚度以提高注入效果,並深入探討主動層的均勻性。經過優化後,我們成功將元件面積從原本的 0.09 cm2 提升至 9 cm2。 優化元件經過測試後得到其啟動電壓為 1.4 V、電激發波長在 538 nm、頻譜半高寬為 22.8 nm、擁有高色純度 95%、最大亮度為 9976 cd/m2 且外部量子效率達到 0.88%。除此之外,元件可以持續工作 30 分鐘。 最後,為了瞭解元件衰退機制,我們運用能量色散 X 射線譜(EDS)、雙束聚焦離子束掃描式電子顯微鏡(FIB)去觀察,經過初步推斷,影響元件衰退有熱效應以及離子遷移(Ion migration)兩項因素,這兩項因素導致元件衰退。
Previously, our team succeeded in making LED components with an area of and anefficiency of 0.6% using the structure ITO/PEDOT:PSS/MAPbBr3/TPBI/LiF/Ag structure. However, the size of the device was limited to 0.09 cm2 . In this thesis, parameters of the original device structure were modified, such as uniformity of the active layer, thickness of the electron injection layer, electron transport layer, and Ag cathode electrode to improve uniform injection of electrons. Area of the fabricated LEDs was significantly increased from the original 0.09 cm2 to 9 cm2. The improved device showed a turn-on voltage of approximately 1.5 V with electroluminescence centered at 538 nm with a full width at half maximum of 22.8 nm. The device displays a high color purity, an external quantum efficiency, and a maximum luminance of 95%, 0.88 %, and 9976 cd/m2, respectively. Also, it can work up 30 minutes. Finally, the underlying mechanisms of device degradation were investigated using energy dispersive X-ray spectroscopy (EDS) and focused ion beam microscope (FIB). The preliminary results indicate that the thermal effect and ion migration are two possible causes for the device degradation under bias.
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