以砷化鎵為基材在1060nm波段側向接面超螢光白光二極體

GaAs-based transverse current injection light emitting diodes at the wavelength 1060nm

陳岳毅(Yueh-Yi Chen)

指導教授 ： 許晉瑋

國立中央大學/資訊電機學院/電機工程學系/碩士(2007年)

摘要

在本論文裡，我們比較了側向p-n接面與一般垂直p-n接面元件之特性，一般的垂直接面發光二極體，在多重量子井中會有載子分佈不均勻的問題，可藉由側向接面元件消除，側向接面元件展現了穩定且平坦的光譜頻寬，在大偏壓電流操作下，3-dB頻寬為165nm，中心波長在1060nm附近，其3-dB頻寬對擴散深度及加入的偏壓電流不敏感，且頻寬有飽和之現象，此說明載子均勻分佈之重要性。

關鍵字

側向接面 ； 超螢光發光二極體 ； 砷化鎵

並列摘要

In this thesis, we compared performance of our demonstrated transverse p-n junction devices to those traditional vertical ones. The nonuniform carrier distribution problem that occurs in the multiple quantum wells (MQWs) of traditional vertical p-n junction LEDs can be totally eliminated by introducing a transverse p-n junction with MQWs combining with different emission wavelengths. These devices exhibit stable, flattened, and invariant broadband optical spectrum with maximum 3-dB bandwidth of 165nm around the wavelength of 1.06μm under a large bias current operation. The bandwidths of devices are not sensitive to diffusion depth and bias currents, revealing the improvement of uniform distribution of carriers.

並列關鍵字

superluminescent diode ； GaAs ； transverse junction

參考文獻

[13] Carla C. Rosa, Vladimir Shidlovski, John A. Rogers, Richard B. Rosen , and Adrian Gh. Podoleanu, “Broadband SLD based source for retina investigations”, Proceedings of SPIE, Vol. 5690,pp. 540-547, 2005

[3] D.Huang, E. A. Swanson, C. P. Lin, J. S. Schuman, W. G. Stinson, W. Chang, M. R. Hee, T. Flotte, K. Gregory, C. A. Puliafito, and J. G. Fujimoto, “Optical coherence tomography,” Science, Vol. 254, pp.1178-1181, 1991.

[1] Brett E. Bouma, Guillermo J. Tearney, Handbook of Optical Coherence Tomography, Marcel Dekker, INC.

[2] A. F. Fercher, W. Drexler, C. K. Hitzenberger, and T. Lasser,” Optical coherence tomography – principles and applications”, Rep. Prog. Phys., Vol. 66, pp. 239-303, 2003

[4] A. F. Fercher, E. Roth, “Ophthalmic laser interferometry,” Proceedings of SPIE, Vol. 658, pp. 48-51, 1986