三維圓柱形場效電晶體之模擬與分析

Simulation and Analysis in Three-Dimension Cylindrical MOSFETs

黃俊誌(Jyun-jhih Huang)

指導教授 ： 蔡曜聰

國立中央大學/資訊電機學院/電機工程學系/碩士(2015年)

摘要

在本篇論文中，為了使我們的模擬程式能夠更精確於實際製程，我們將使用C語言來架構三維圓柱座標模擬程式，以提升模擬圓弧接面的準確度，並且比較傳統直角座標系統與我們所架構之圓柱座標系統的差異性。藉由模擬簡單的圓柱形電阻來驗證我們所架構的程式，並且探討改變元件的R半徑將會對元件的空乏區寬度、電場、臨限電壓造成什麼影響。最後我們更進一步的開發出新的contact方式：floating contact，以改善模擬環繞式結構的元件時，其body無法被contact的問題。

關鍵字

場效電晶體 ； 三維 ； 圓柱座標 ； 元件模擬

並列摘要

In this thesis, in order to make our simulation program more accurate at the actual manufacturing process, we will use the C language to build the three dimensional cylindrical coordinate simulation program. It can help us improve the accuracy of arc junction and compare Cartesian coordinate system with Cylindrical coordinate system. We can validate our program by simulating a cylindrical resistor, and discuss the effect on depletion width, electric field and threshold voltage caused by the variation of R radius. Finally, we have further developed a special floating contact to solve the problem that the body cannot be contacted directly in a device with surrounding gates .

並列關鍵字

MOSFET ； device simulation ； cylindrical coordinates ； three-dimensional

參考文獻

[5] A. L. Theng, “Realization of Gate-All-Around (GAA) SOI MOSFET Using Replacement Gate Mask, Electron Devices and Solid-State Circuits”, pp. 1129 – 1131, 2007.

[6] Jae Young Song, “Design Optimization of Gate-All-Around (GAA) MOSFETs, IEEE Transactions on Nanotechology”, Vol. 5, pp. 186 - 191, 2006.

[7] Z. X. Chen, “Realization of Ni Fully Silicided Gate on Vertical Silicon Nanowire MOSFETs for Adjusting Threshold Voltage”, IEEE Electron Device Letters, Vol. 32, pp. 1495 - 1497, 2011.

[8] Xiang Li, “Vertically Stacked and Independently Controlled Twin-Gate MOSFETs on a Single Si Nanowire, IEEE Electron Device Letters”, Vol. 32, pp. 1492 – 1494, 2011.

[1] D. A. Neamen, Semiconductor physics and devices, 3rd ed., McGraw-Hill Companies Inc., New York, 2003.