本論文主要探討多晶矽工廠內各製程區域氯化氫濃度分佈情況,並將其測定之氯化氫濃度與環境中溫度、濕度、及風向進行關聯性探討。採樣時程為2011年至2013年,採樣週期為上、下半年各進行一次區域環境採樣。多晶矽工廠內各作業區域氯化氫濃度測定最大值分別如下:液氯槽區0.041ppm、鹽酸合成區0.044ppm、三氯矽甲烷(TCS)合成區0.078ppm、蒸餾區0.051ppm、儲槽區0.048ppm、長晶區0.052ppm、尾氣處理區0.045ppm、及尾氣回收區0.113ppm。 實驗結果顯示多晶矽工廠內各作業區域氯化氫濃度皆有增加之趨勢,氯化氫測定濃度增加幅度較大之區域為三氯矽甲烷合成區、長晶區、及尾氣回收區,尤其以尾氣回收區之氯化氫濃度增加幅度最大。推測此現象應與該作業區域使用之製程設備、管路、及法蘭有氯化氫逸散情況有關。 將氯化氫濃度測定結果與溫度、濕度、及風向進行比較後,得知各作業區域之氯化氫濃度與溫度、濕度、及風向未見其關聯性。 關鍵字:多晶矽、氯化氫濃度、三氯矽甲烷、四氯化矽
This paper studied the concentration distribution of hydrogen chloride within the polysilicon plant. The relationship of hydrogen chloride concentration with environment temperature, humidity, and wind direction were pursued. The samples were taken during the year 2011-2013 each half year. Hydrogen chloride concentrations were measured for each work area within the polysilicon plants. The maximum values for various area respectively were as follows: 0.041ppm in chlorine tank area; 0.044ppm in hydrochloric acid synthesis zone; 0.078ppm in trichloro-silane (TCS) synthesis zone; 0.051ppm in distillation zone; 0.048ppm in reservoir area; 0.052ppm in long grain zone; 0.045ppm in gas treatment area; and 0.113ppm in tail gas recovery zone. Experimental results showed that the concentration of hydrogen chloride in each work area within the polysilicon plant had tendency to increase. The higher rate of increase happened at triclosan silane synthesis zone, long grain area, and tail gas recovery area, respectively. The area of hydrogen chloride gas recovery had the sharpest increase in the concentration, particularly. This phenomenon could be explained by the fugitive gases from the process equipments, piping, and flanges used in the operation