- 會議論文
High-frequency Operation of Permeable Hot-electron Metal-Base Transistor
高頻用可穿透熱電子半導體金屬基極電晶體之研製
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並列摘要
A new amorphous silicon/silicon carbide metal-base transistor has been successfully fabricated on an ITO/glass substrate by plasma-enhanced chemical vapor deposition (PECVD). The operating characteristics of the transistor effect and evidence for true injection have been observed. The measured common-base current-transfer ratio is 9.75% at a collector field of 7.5×10^4V/cm and an emitter current of 0.2 mA. The ballistic mean free path in Pt obtained from the current-transfer ratio is 97 Å.
延伸閱讀
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