Hot-Electron Effect in n-InSb Raman Spin-flip Laser
倪祖偉(Tsu-Wei Nee)；Marlan O. Scully
Chinese Journal of Physics
|Volume or Term/Year and Month of Publication||
17卷1期（1979 / 04 / 01）
44 - 48
The strong transient optical absorption in n-InSb Raman Spin-flip laser device at 2°K was observed by Figueira, Cantrell, Rink and Forman. It was interpreted due to the laser generated hot conduction electrons. We present the main results of a theoretical microscopic calculations for this non-linear laser absorption. By assuming the time-dependent functions for electronic temperature and Fermi energy, the time evolution of the non-equilibrium hot electron distribution during the pulsed laser irradiation is calculated from first principle.