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High-Field Transport in n-type GaAs
並列摘要
The drifted Maxwellian approximation (DMA) is used to study the high-field transport properties of n-type GaAs. The three-level band structure is used to describe the conduction band and all the conduction electrons are assumed to have the same temperature. Results are compared with those of the Monte Carlo calculation in the average drift velocity, the electron temperature, and the electron population in the r-level for the electric field at 4kV/cm and the lattice temperature 300K. The DMA agrees reasonably well in one or two, but not all three, of the above quantities. It is expected that the DMA would be a better approximation at lower fields.
並列關鍵字
無資料延伸閱讀
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