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Low Temperature Electric and Magnetic Studies of Permalloy Thin Films

並列摘要


Permalloy thin films with thickness between 5 nm and 400 μm were grown on Si( 100) wafers by DC magnetron sputtering. Electric resistivity and magnetoresistance were studied between 4 and 300 K. With decreasing temperature the electric resistivity decreases, but the magnetoresistance (MR) ratio is found to increase. The MR ratio at room temperature varies between 0.3 and 3.1% for samples with thickness between 5 nm and 400 pm. The maximum MR ratio measured at 4.2 K is approximately 7%. The grain size increases with increasing thickness of the films and we show that this effect leads to a decrease in the electric resistivity and to an increase in the MR ratio.

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陳韻如(2014)。台灣新上市、櫃公司實行股票購回政策之動機與績效〔碩士論文,國立中正大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0033-2110201613581175

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