基于MOSFET PDE模型的射频电路仿真算法研究

Translated Titles

RF Circuit Simulation Algorithm Based on MOSFET PDE Model


谭俊(Jun Tan);来金梅(Jin-Mei Lai);赵晖(Hui Zhao);任俊彦(Jun-Yan Ren)

Key Words

金属氧化物半导体晶体管 ; 偏微分方程 ; 偏微分方程求解算法 ; 常微分方程 ; 代数方程 ; 耦合系统 ; MOSFET ; PDE ; PDE solver ; ODE ; AE ; coupled system



Volume or Term/Year and Month of Publication

25卷1期(2005 / 02 / 25)

Page #

119 - 123

Content Language


Chinese Abstract

研究了基于MOSFET偏微分方程(PDE)模型的电路仿真算法,并提出一种求解PDE的快速算法。当MOSFET PDE模型用于射频(RF)电路仿真时,系统方程为一个耦合系统,包括偏微分方程(PDE)、常微分方程(ODE)和代数方程(AE)。采用一套迭代算法来求解该耦合系统。将上述的模型和算法用于一个压控振荡器(VCO)的瞬态特性仿真,模拟结果与理论分析相符。

English Abstract

In this paper, we present a circuit simulation algorithm based on the partial differential equation (PDE) model of MOSFETs, together with a fast algorithm for solving the PDE. W hen the PDE model of MOSFETs is applied for circuit simulation, the system equation becomes a coupled system, including partial differential equations (PDE), ordinary differential equation (ODE), and algebraic equations (AE). An iterative algorithm is used to solve this coupled system. We adopt the above model and algorithms to simulate the transient response of a voltage controlled oscillator (VCO). The simulation results match well with the theoretical analysis.

Topic Category 基礎與應用科學 > 物理
工程學 > 電機工程