Title

新型大功率双波长半导体激光器的研制

Translated Titles

Novel High Power Dual-Wavelength Semiconductor Laser Diode

Authors

郭伟玲(Wei-Ling Guo);田咏桃(Yong-Tao Tian);李建军(Jian-Jun Li);马丽娜(Li-Na Ma);鲁鹏程(Peng-Cheng Lu);王婷(Ting Wang);邹德恕(De-Shu Zou);沈光地(Guang-Di Shen)

Key Words

大功率 ; 半导体激光器 ; 双波长 ; 隧道结 ; high power ; semiconductor lasers ; dual-wavelength ; tunneling junction

PublicationName

固體電子學研究與進展

Volume or Term/Year and Month of Publication

25卷1期(2005 / 02 / 25)

Page #

129 - 132

Content Language

簡體中文

Chinese Abstract

提出了一种新结构半导体双波长激光器,即用隧道结把两个发射不同波长的激光器结构通过外延生长的方法连接起来。通过计算和设计,制备了性能良好的大功率激射的双波长半导体激光器。双波长器件的实际激射波长分别为951nm和987nm,为基模激射。器件在530 mA直流工作时输出功率达到500 mW,斜率效率为1.33 W/A。在2A电流时功率达2.4W,斜率效率为1.38W/A;3A电流时功率达3.1W,斜率效率为1.21W/A。

English Abstract

A novel structure of high power dual-wavelength semiconductor laser diode is proposed and fabricated. Two kinds of laser structure are cascaded by a high doping tunnel junction during the epitaxial growth. The lasers can emit at wavelength of 951 nm and 987 nm at the same time. The output power of the dual-wavelength laser is as high as 3.1 W at 3 A and 2.4 W at 2A. And the slope efficiency of these devices is about 1.33 A/W. Much higher output power can be reached for those dual-wavelength lasers when modifying the structure.

Topic Category 基礎與應用科學 > 物理
工程學 > 電機工程