Title

AlGaN/GaN HEMT电流崩塌效应研究进展

Translated Titles

Progress of the Research on Current Collapse of AlGaN/GaN HEMTs

Authors

王翠梅(Cui-Mei Wang);王晓亮(Xiao-Liang Wang);王军喜(Jun-Xi Wang)

Key Words

铝镓氮/氮化镓 ; 高温电子迁移率晶体管 ; 电流崩塌效应 ; 功率器件 ; AlGaN/GaN ; HEMT ; current collapse ; power device

PublicationName

固體電子學研究與進展

Volume or Term/Year and Month of Publication

25卷1期(2005 / 02 / 25)

Page #

35 - 41

Content Language

簡體中文

Chinese Abstract

简要回顾了AlGaN/GaN HEMT器件电流崩塌效应研究的进展,着重阐述了虚栅模型、应力模型等几种解释电流崩塌效应形成机理的模型和器件钝化、生长盖帽层等减小电流崩塌效应的措施。

English Abstract

A review on the progress and research of current collapse of AlGaN/GaN HEMTs is presented. The reason caused the current collapse is briefly introduced, including the model of virtual gate and bi as stress and so on. A few methods to decrease current collapse, such as passivating, growing capped layer are also described.

Topic Category 基礎與應用科學 > 物理
工程學 > 電機工程