Title

一种新型的6H-SiC MOS器件栅介质制备工艺

Translated Titles

A Novel Process of Preparing 6H-SiC MOS Device Gate Dielectrics

Authors

吴海平(Hai-Ping Wu);徐静平(Jing-Ping Xu);李春霞(Chun-Xia Li)

Key Words

碳化硅 ; 一氧化氮退火 ; 金属-氧化物-半导体电容 ; 界面态密度 ; 可靠性 ; SiC ; NO anneal ; MOS capacitors ; interface-state density ; reliability

PublicationName

固體電子學研究與進展

Volume or Term/Year and Month of Publication

25卷1期(2005 / 02 / 25)

Page #

56 - 59

Content Language

簡體中文

Chinese Abstract

采用干O2+CHCCl3(TCE)氧化并进干/湿NO退火工艺生长6H-SiC MOS器件栅介质,研究了SiO2/SiC界面特性。结果表明,NO退火进一步降低了SiO2/SiC的界面态密度和边界陷阱密度,减小了高场应力下平带电压漂移,增强了器件可靠性,尤其是湿NO退火的效果更为明显。

English Abstract

The SiO2/SiC interface characteristics of 6H SiC MOS devices gate dielectrics grown by O2+CHCCl3(TCE) oxidation with dry/wet NO anneal process were investigated. The results indicated t hat NO anneal could decrease interface-state density and border trap density, and enhance reliabilities of SiC MOS devices. Especially, the improvements of wet NO anneal on samples interface properties were the most remarkable.

Topic Category 基礎與應用科學 > 物理
工程學 > 電機工程