大束流离子注入形成P-Si CoSi2/Si肖特基结的电学特性

Translated Titles

Electronic Characteristics of P-Si CoSi2/Si Schottky Junction Formed by High Flux Metal Ion Implantation


李英(Ying Li);王玉花(Yu-Hua Wang);王燕(Yan Wang);田立林(Li-Lin Tian)

Key Words

肖特基 ; 势垒高度 ; 退火条件 ; Schottky ; barrier height ; annealing condition



Volume or Term/Year and Month of Publication

25卷1期(2005 / 02 / 25)

Page #

98 - 101

Content Language


Chinese Abstract


English Abstract

The electronic characteristics of Schottky junction formed through metal ion implantation are investigated for the first time in this paper. The properties of Schottky junction are characterized by I-V and C-V measurements. Barrier height, series resistance and ideality factor are extracted based on the thermionic-emission theory. And the qualities of diodes formed under different annealing conditions are compared.

Topic Category 基礎與應用科學 > 物理
工程學 > 電機工程