Title

大束流离子注入形成P-Si CoSi2/Si肖特基结的电学特性

Translated Titles

Electronic Characteristics of P-Si CoSi2/Si Schottky Junction Formed by High Flux Metal Ion Implantation

Authors

李英(Ying Li);王玉花(Yu-Hua Wang);王燕(Yan Wang);田立林(Li-Lin Tian)

Key Words

肖特基 ; 势垒高度 ; 退火条件 ; Schottky ; barrier height ; annealing condition

PublicationName

固體電子學研究與進展

Volume or Term/Year and Month of Publication

25卷1期(2005 / 02 / 25)

Page #

98 - 101

Content Language

簡體中文

Chinese Abstract

采用金属离子注入法形式CoSi2/Si肖特基结并分析电学特性。分别测量不同退火条件下样品的I-V、C-V特性,得出了各样品的势垒高度、串联电阻和理想因子。结果表明,采用快速热退火方法形成的结性能较好。

English Abstract

The electronic characteristics of Schottky junction formed through metal ion implantation are investigated for the first time in this paper. The properties of Schottky junction are characterized by I-V and C-V measurements. Barrier height, series resistance and ideality factor are extracted based on the thermionic-emission theory. And the qualities of diodes formed under different annealing conditions are compared.

Topic Category 基礎與應用科學 > 物理
工程學 > 電機工程