鋅蒸發導致鋅錫氧薄膜之組成變化

Composition Variation of Zn-Sn-O Films Induced by Zn Evaporation

方皓葦(Hau-Wei Fang) ； 劉旭禎(Shiu-Jen Liu)

《真空科技》 27卷3期 (2014/09) Pp. 29-36

摘要

以脈衝雷射鍍膜技術製備之鋅錫氧薄膜中觀察到組成變化現象，此組成變化歸因於在低氧壓環境下當溫度高於600˚C所產生之鋅蒸發現象。於溫度500˚C以下製備之鋅錫氧薄膜為非晶態，但薄膜隨著提高成長溫度，鋅蒸發現象加劇而逐漸產生結晶，最終當基板溫度達到750˚C時，可得到具有擇優取向之二氧化錫薄膜。以直流反應磁控濺鍍技術製備之鋅錫氧薄膜在後熱處理過程中也發生鋅蒸發現象，後熱處理實驗顯示低氧壓為產生鋅蒸發現象之關鍵條件。本實驗亦研究了成長溫度對於鋅錫氧薄膜的結構、電與光特性之影響。

關鍵字

透明導電薄膜 ； 鋅錫氧薄膜 ； 組成變化 ； 鋅蒸發

並列摘要

The composition variation in Zn-Sn-O (ZTO) films grown by a pulsed-laser deposition technique was examined. The composition variation is attributed to Zn evaporation, which occurs at temperatures higher than 600˚C under low oxygen pressures. ZTO films grown at and below 500˚C are amorphous. Upon increasing the growth temperature of the ZTO films, the Zn evaporation was enhanced, and crystalline phases were observed. Textured SnO_2 films were finally obtained when the substrate temperature of the films was raised to 750˚C. Composition variation was also observed in post-annealed ZTO films grown by dc reactive magnetron sputtering. The post-annealing experiments indicate that a low oxygen pressure is the essential condition for Zn evaporation in ZTO films. The effect of the growth temperature on the structural, electrical and optical properties of the ZTO films was also investigated.

並列關鍵字

Transparent Conducting Oxide ； Zinc-tin-oxide Film ； composition variation ； Zn evaporation