表面反應擴散(RD)的理論分析及其在晶片上自組裝單層膜(SAM)技術的應用

Theoretical Analysis and Applications of Surface Reaction-Diffusion (RD) on Self-Assembled Monolayer (SAM) Chip

葛威成 ； 陳惠民

《國家奈米元件實驗室奈米通訊》 17卷3期 (2010/09) Pp. 7-10

https://doi.org/10.29913/NDLC.201009.0002

摘要

Self-assembled Monolayer (SAM)的製作通常是應用擴散的原理，讓材料在晶片表面反應而形成SAM，因此描述SAM成長機制很自然的可以合併鍵結反應與擴散兩種現象而以Reaction-Diffusion (RD)方程式來描述。然而對於波寬隨時間變大的微擾機制(w~t(上標 β))還必須仰賴重整化群的理論來推導，但推導出來的β理論值卻往往與實驗值有所出入，因此我們提出一個比較簡單且有系統的的方法來推導出不同形式RD方程式的精確解。利用這些精確解可以模擬出各種不同β值，並依此來解釋SAM可能的反應機制。

關鍵字

自組裝薄膜 ； 反應擴散

並列摘要

Diffusion technique has been widely applied on the fabrication of self-assembled monolayer (SAM). By using a diffusive precursor allows material to distribute and to react on the surface of chips. Therefore, coupling reacting and diffusing together into an equation of Reaction-Diffusion (RD) may be essential to describe SAM growth mechanism on the chip surface. However, modeling the phenomenon of wavefront broadening which is induced by fluctuation (w~t(superscript β)) may require a complicate Renormalization Group (RG) theory. Moreover, there is inconsistency in terms of β value between RG theory prediction and experimental results. In this communication, therefore, we demonstrated a systematic method for finding the exact solutions of various types of RD equations. Various β values can be modeled by applying these solutions. Further more, the results may be applied to explain many real world’s phenomena such as bacterial or cell growth, etc.

並列關鍵字

Self Assembled Monolayer ； Reaction-Diffusion ； Fisher's Equation