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可撓式矽薄膜太陽能電池

Flexible Si Thin Film Solar Cell

摘要


此篇文章將介紹國家奈米元件實驗室(NDL)利用開發多年之低溫、低成本、高品質之矽薄膜技術,發展可撓式矽薄膜太陽能電池。本團隊目前已成功的利用高密度電漿化學氣相沉積(HDPCVD)成長出各類型的矽薄膜,如:非晶矽(a-Si)、微晶矽(μc-Si)、微晶矽鍺(μc-SiGe)等具不同能隙的材料。而以高密度電漿技術所製作的單接面非晶矽太陽能電池,在製程溫度200℃(135℃)的條件下,轉換效率可達8.1%(4.1%)。對薄膜太陽能電池的薄膜成長、製程整合及分析皆有相當的基礎。這些低的熱預算、高導電性和高沉積速率薄膜技術開啟了高效率可撓式多接面SiGeC太陽能電池的可行性。

並列摘要


This paper would introduce the development of flexible Si thin film solar cell in NDL utilizing the low temperature, low cost and high quality thin film technology. By using high-density plasma, silicon-based thin films with tunable band-gap such as a-Si, μc-Si, and μc-SiGe were successfully developed by our groups. he conversion efficiency of the single junction amorphous Si solar cell made by using the high-density plasma technique at the NDL has reached 8.1% (4.1%) with growth temperature of 200℃ (135℃). Such thin film technique features low thermal budget and high deposition rate, which opens the feasibility of the high efficiency multi-junction SiGeC solar cells.

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