此篇文章將介紹國家奈米元件實驗室(NDL)利用開發多年之低溫、低成本、高品質之矽薄膜技術,發展可撓式矽薄膜太陽能電池。本團隊目前已成功的利用高密度電漿化學氣相沉積(HDPCVD)成長出各類型的矽薄膜,如:非晶矽(a-Si)、微晶矽(μc-Si)、微晶矽鍺(μc-SiGe)等具不同能隙的材料。而以高密度電漿技術所製作的單接面非晶矽太陽能電池,在製程溫度200℃(135℃)的條件下,轉換效率可達8.1%(4.1%)。對薄膜太陽能電池的薄膜成長、製程整合及分析皆有相當的基礎。這些低的熱預算、高導電性和高沉積速率薄膜技術開啟了高效率可撓式多接面SiGeC太陽能電池的可行性。
This paper would introduce the development of flexible Si thin film solar cell in NDL utilizing the low temperature, low cost and high quality thin film technology. By using high-density plasma, silicon-based thin films with tunable band-gap such as a-Si, μc-Si, and μc-SiGe were successfully developed by our groups. he conversion efficiency of the single junction amorphous Si solar cell made by using the high-density plasma technique at the NDL has reached 8.1% (4.1%) with growth temperature of 200℃ (135℃). Such thin film technique features low thermal budget and high deposition rate, which opens the feasibility of the high efficiency multi-junction SiGeC solar cells.