- 期刊
利用介電質調變之超高壓橫向式金氧半電晶體
Dielectric Material Induced Electric Field Redistribution in Ultra High Voltage LDMOSFET
摘要
本文提出一個新的高壓元件設計概念，利用深溝層隔離(Deep Trench Isolation, DTI)加入到橫向式擴散金氧半場效電晶體(LDMOSFET)的漂移區內，改變其電場分佈，以獲致更好的元件特性。我們利用模擬來比較不同深溝層隔離的位置對元件漂移區的電場分佈造成的變化，進而討論對高壓元件效能的影響；從模擬結果得知，本文提出的結構在保持崩潰電壓不變的情形下，導通電阻能夠改善達29.1%。
並列摘要
This paper proposes a new designed power LDMOSFET with a deep trench isolation (DTI) in the drift region. We also demonstrate that the electric field is redistributed by the inserted DTI. The effect of the DTI position on device characteristics is discussed as well. Simulation results show that the on-state resistance of the proposed structure is reduced by 29.1% in an 800V device without any degradation on breakdown voltage.
延伸閱讀
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