鎳鉑矽化物於矽碳磊晶層上生成行爲之探討

林依頻 ； 黃仕賢 ； 李勝偉

《國家奈米元件實驗室奈米通訊》 18卷1期 (2011/03) Pp. 30-37

https://doi.org/10.29913/NDLC.201103.0005

摘要

在互補式金氧半電晶體元件尺寸日益縮小的趨勢下，自我對準金屬矽化物製程(Self-aligned Silicidation Process)相關技術也日漸重要。近幾年來金氧半場效電晶體為了增加其元件效能，因此利用矽鍺磊晶(Si(下標 1-x)Ge(下標 x))或矽碳磊晶(Si(下標 1-y)C(下標 y))源極／汲極所產生的通道應變來增加載子移動率。本文即針對鎳矽化物(Ni Silicide)、鎳鉑矽化物(Ni(Pt) Silicide)和鉑化物(Pt Silicide)於矽碳磊晶層上之生成行為作一深入探討。本研究發現在磊晶層摻雜碳的情況下，矽化物的成長會受到延遲，因而使矽化物薄膜的熱穩定性變好。另外，於鎳矽化物中添加鉑，亦會提升矽化物薄膜的熱穩定性。另外，同時也針對矽碳磊晶層在矽化過程中之熱穩定性作深入分析。

關鍵字

鎳矽化物 ； 鎳鉑矽化物 ； 鉑矽化物 ； 矽碳磊晶層 ； 熱穩定性

並列摘要

Strain engineering is commonly used for improving the performance of metal-oxide-semiconductor (MOS) devices. For example, n-channel MOS (NMOS) devices with silicon-carbide (Si(subscript 1-y)C(subscript y)) grown in the source and drain (S/D) regions as uniaxial compressive stressors for the channel can achieve significant drive current improvements. However, successfully integrating Si(subscript 1-y)C(subscript y) epilayers into a standard device process flow requires reliable metal-silicide contacts in the Si(subscript 1-y)C(subscript y) S/D regions. In this study, the formation of Ni silicide, Ni(Pt) silicide, and Pt silicide on Si(subscript 1-y)C(subscript y) were investigated. The incorporation of C atoms retarded the growth kinetics of silicide, which enhanced the thermal stability of silicide films. In addition, the Ni(Pt) layer promoted the Ni silicide thermal stability. The thermal stability of Si(subscript 1-y)C(subscript y) epilayers during silicidation was also studied.