控制式的十八烷基三氯矽烷單層雙重表面改質以促成奈米晶種暨選擇性無電鍍銅金屬化

Nano-seeding via Controlled Dual Surface Modification of Octadecyltrichlorosilane Monolayer for Selective Electroless Copper Metallization

陳松德(Sung-Te Chen) ； 陳錦山(Giin-Shan Chen)

《修平學報》 25期 (2012/09) Pp. 91-101

https://doi.org/10.29548/BGYY.201209.0006

摘要

本研究試圖在SiO2介電層表面披覆烷基自組裝單層（Self-Assembled Monolayer；SAMs），並採用真空電漿對其進行表面改質及官能基圖案製作。其結果能夠促使採用一種新型的奈米晶種技術以製作微米/奈米級的無電鍍金屬化圖案。N2-H2 電漿表面改質可使烷基自組裝單層［以十八烷基三氯矽烷（Octadecyltrichlorosilane；OTS）為試驗材料］之最頂端的脂肪烴鏈轉換成羧基（COOH）。此物種先前僅會發生在氧化性的電漿表面改質，而在N2-H2電漿環境下卻依然形成乃源於電漿裂解、水誘發的化學氧化途徑。進一步利用SC-1 （Standard Clean 1, NH4OH/H2O2/H2O）溶液可促使電漿改質區域（即COOH 終止之表面)產生能有效吸附奈米金屬晶種的表面官能基。此種“固定化”奈米晶種圖案製程既未使用昂貴的PdCl2和複雜的添加物，亦無晶種團聚、稀疏與尺寸不均勻的缺點，且具充分密度以充當無電鍍沉積的模板以促成厚度小於10 nm的銅金屬化薄膜圖案之形成。

關鍵字

烷基自組裝單層 ； 真空電漿 ； 奈米晶種 ； 十八烷基三氯矽烷 ； 無電鍍銅金屬化

並列摘要

In this work, an attempt to fabricate Cu-based metallization patterns on SiO2 dielectric layers was made using plasma-patterned self-assembled monolayers (SAMs), in conjunction with a new aqueous nano-seeding and electroless deposition process. Using octadecyltrichlorosilane (OTS) SAMs, the paper shown that N2-H2 plasma could lead to the successive conversion of the topmost aliphatic chains of alkyl SAMs transfer to carboxyl (COOH) functional groups, via a plasma-dissociated, water-mediated chemical oxidation procedure. Modifying the COOH terminated regions with an aqueous solution (Standard Clean 1, NH4OH/H2O2/H2O) created surface functionalities for site-controlled metallic seeding. Neither the combination of costly PdCl2 and complex additives nor the demerits of seed agglomeration and seed sparseness were involved. Therefore, the particle density was sufficiently high to grow highly resolved electroless Cu metallization micro-patterns with a film thickness of less than 10 nm.

並列關鍵字

Self-Assembled Monolayers (SAMs) ； Vacuum Plasma ； Nano-Seeding ； OTS ； Electroless Cu Metallization

參考文獻

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