Translated Titles

The Fabrication of Zinc Oxide nanowires and Improvement of the Optoelectronic Properties and Applications to Organic Light Emitting Devices





Key Words

氧化鋅奈米線 ; 水熱法 ; 雙氧水處理 ; ZnO nanowires ; hydrothermal method ; hydrogen peroxide treatment



Volume or Term/Year and Month of Publication


Academic Degree Category




Content Language


Chinese Abstract

本論文研究主要可分為兩個部分,第一部分為氧化鋅奈米線結構 的研究,我們利用水熱法生長氧化鋅奈米線,並且藉由雙氧水處理與 鹽酸蝕刻來改善氧化鋅奈米線的光電性質。我們採用兩種方式對氧化 鋅奈米線做雙氧水處理,第一種是將氧化鋅奈米線浸泡於雙氧水並且 以75

English Abstract

The research in this paper can be separated into two parts. First, the optoelectronic properties of zinc oxide nanowires fabricated by hydrothermal method can be improved by the hydrogen peroxide treatment and the hydrochloric acid (HCl) etching. Zinc oxide (ZnO) nanowires are treated with the hydrogen peroxide (H2O2) solution through two different approaches. The first one is to immerse ZnO nanowires into the H2O2 solution and the samples are heated at 75

Topic Category 電機資訊學院 > 光電工程學研究所
工程學 > 電機工程
  1. [3] Y. R. Ryu, T. S. Lee, J. A. Lubguban, H. W. White, B. J. Kim, Y. S. Park, and C. J. Youn, "Next generation of oxide photonic devices: ZnO-based ultraviolet light emitting diodes," Applied Physics Letters, vol. 88, Jun 2006.
  2. [5] S. H. Park, S. H. Kim, and S. W. Han, "Growth of homoepitaxial ZnO film on ZnO nanorods and light emitting diode applications," Nanotechnology, vol. 18, Feb 2007.
  3. [6] M. H. Huang, S. Mao, H. Feick, H. Q. Yan, Y. Y. Wu, H. Kind, E. Weber, R. Russo, and P. D. Yang, "Room-temperature ultraviolet nanowire nanolasers," Science, vol. 292, pp. 1897-1899, Jun 2001.
  4. [7] Z. L. Pei, C. Sun, M. H. Tan, J. Q. Xiao, D. H. Guan, R. F. Huang, and L. S. Wen, "Optical and electrical properties of direct-current magnetron sputtered ZnO : Al films," Journal of Applied Physics, vol. 90, pp. 3432-3436, Oct 2001.
  5. [8] C. Agashe, O. Kluth, J. Hupkes, U. Zastrow, B. Rech, and M. Wuttig, "Efforts to improve carrier mobility in radio frequency sputtered aluminum doped zinc oxide films," Journal of Applied Physics, vol.95, pp. 1911-1917, Feb 2004.
  6. [9] Z. W. Pan, Z. R. Dai, and Z. L. Wang, "Nanobelts of semiconducting oxides," Science, vol. 291, pp. 1947-1949, Mar 2001.
  7. [10] W. I. Park, D. H. Kim, S. W. Jung, and G. C. Yi, "Metalorganic vapor-phase epitaxial growth of vertically well-aligned ZnO nanorods," Applied Physics Letters, vol. 80, pp. 4232-4234, Jun 2002.
  8. [11] X. Liu, X. H. Wu, H. Cao, and R. P. H. Chang, "Growth mechanism and properties of ZnO nanorods synthesized by plasma-enhanced chemical vapor deposition," Journal of Applied Physics, vol. 95, pp.3141-3147, Mar 2004.
  9. [12] Y. W. Heo, V. Varadarajan, M. Kaufman, K. Kim, D. P. Norton, F. Ren, and P. H. Fleming, "Site-specific growth of Zno nanorods using catalysis-driven molecular-beam epitaxy," Applied Physics Letters, vol. 81, pp. 3046-3048, Oct 2002.
  10. [13] Q. C. Li, V. Kumar, Y. Li, H. T. Zhang, T. J. Marks, and R. P. H. Chang, "Fabrication of ZnO nanorods and nanotubes in aqueous solutions," Chemistry of Materials, vol. 17, pp. 1001-1006, Mar 2005.
  11. [15] L. E. Greene, M. Law, J. Goldberger, F. Kim, J. C. Johnson, Y. F. Zhang, R. J. Saykally, and P. D. Yang, "Low-temperature wafer-scale production of ZnO nanowire arrays," Angewandte Chemie-International Edition, vol. 42, pp. 3031-3034, 2003.
  12. [16] H. S. Kang, J. S. Kang, J. W. Kim, and S. Y. Lee, "Annealing effect on the property of ultraviolet and green emissions of ZnO thin films," Journal of Applied Physics, vol. 95, pp. 1246-1250, Feb 2004.
  13. [17] K. K. Kim, H. S. Kim, D. K. Hwang, J. H. Lim, and S. J. Park, "Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant," Applied Physics Letters, vol. 83, pp. 63-65, Jul 2003.
  14. [19] K. A. Bulashevich, I. Y. Evstratov, V. N. Nabokov, and S. Y. Karpov, "Simulation of hybrid ZnO/AlGaN single-heterostructure light-emitting diode," Applied Physics Letters, vol. 87, Dec 2005.
  15. [20] Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, "Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes," Applied Physics Letters, vol. 83, pp. 2943-2945, Oct 2003.
  16. [21] Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, "Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates," Applied Physics Letters,vol. 83, pp. 4719-4721, Dec 2003.
  17. [23] H. Hosono, H. Ohta, K. Hayashi, M. Orita, and M. Hirano, "Near-UV emitting diodes based on a transparent p-n Junction composed of heteroepitaxially grown p-SrCu2O2 and n-Zno," Journal of Crystal Growth, vol. 237, pp. 496-502, Apr 2002.
  18. electroluminescence from ZnO/polymer heterojunction light-emitting diodes," Nano Letters, vol. 5, pp. 2005-2008, Oct
  19. [25] 黃耀德, "氧化鋅奈米粒子光激發光之研究與電激發光元件的製
  20. [27] M. R. Wang, J. Wang, W. Chen, Y. Cui, and L. D. Wang, "Effect of preheating and annealing temperatures on quality characteristics of ZnO thin film prepared by sol-gel method," Materials Chemistry and Physics, vol. 97, pp. 219-225, Jun 2006.
  21. [28] M. Ohyama, H. Kozuka, and T. Yoko, "Sol-gel preparation of ZnO films with extremely preferred orientation along (002) plane from zinc acetate solution," Thin Solid Films, vol. 306, pp. 78-85, Aug 1997.
  22. [31] Chunming Jin, Ashutosh Tiwari, and R. J. Narayan.,
  23. "Ultraviolet-illumination-enhanced photoluminescence effect in zinc oxide thin films," Journal of Applied Physics, vol. 98, p. 083707, 2005.
  24. [32] H. Windischmann and P. Mark, "MODEL FOR THE OPERATION
  25. [34] B. M. Keyes, L. M. Gedvilas, X. Li, and T. J. Coutts, "Infrared spectroscopy of polycrystalline ZnO and ZnO : N thin films," Journal of Crystal Growth, vol. 281, pp. 297-302, Aug 2005.
  26. [35] Y. F. Chen, L. Wang, C. L. Mo, Y. Pu, W. Q. Fang, and F. Y. Jiang, "Study of structural and luminescent properties of high-quality ZnO thin films treatment with hydrogen peroxide solution," Materials Science in Semiconductor Processing, vol. 8, pp. 569-575, Oct 2005.
  27. [1] A. A. Sokol, S. A. French, S. T. Bromley, C. R. A. Catlow, and v. D. H. J. J. a. P. Sherwood, "Point defects in ZnO," Faraday Discussions, vol. 134, pp. 267-282, 2007.
  28. [2] V. A. Karpina, V. I. Lazorenko, C. V. Lashkarev, V. D. Dobrowolski, L. I. Kopylova, V. A. Baturin, S. A. Pustovoytov, A. J. Karpenko, S. A. Eremin, P. M. Lytvyn, V. P. Ovsyannikov, and E. A. Mazurenko, "Zinc oxide - analogue of GaN with new perspective possibilities," Crystal Research and Technology, vol. 39, pp. 980-992, Nov 2004.
  29. [4] Z. P. Wei, Y. M. Lu, D. Z. Shen, Z. Z. Zhang, B. Yao, B. H. Li, J. Y. Zhang, D. X. Zhao, X. W. Fan, and Z. K. Tang, "Room temperature p-n ZnO blue-violet light-emitting diodes," Applied Physics Letters, vol. 90, Jan 2007.
  30. [14] M. Guo, P. Diao, X. D. Wang, and S. M. Cai, "The effect of hydrothermal growth temperature on preparation and
  31. photoelectrochemical performance of ZnO nanorod array films," Journal of Solid State Chemistry, vol. 178, pp. 3210-3215, Oct 2005.
  32. [18] B. M. Ataev, Y. I. Alivov, V. A. Nikitenko, M. V. Chukichev, V. V. Mamedov, and S. S. Makhmudov, "n-ZnO/p-GaN/alpha-Al2O3 heterojunction as a promising blue light emitting system," Journal of Optoelectronics and Advanced Materials, vol. 5, pp. 899-902, Dec 2003.
  33. [22] A. Osinsky, J. W. Dong, M. Z. Kauser, B. Hertog, A. M. Dabiran, P. P. Chow, S. J. Pearton, O. Lopatiuk, and L. Chernyak, "MgZnO/AlGaN heterostructure light-emitting diodes," Applied Physics Letters, vol. 85, pp. 4272-4274, Nov 2004.
  34. [24] R. Konenkamp, R. C. Word, and M. Godinez, "Ultraviolet
  35. 2005.
  36. 作," 國立臺灣大學電機資訊學院電子工程學研究所, 碩士論文, 2006.
  37. [26] 林宗賢, "新型有機發光高分子之合成、能量轉移機制研究," 國立中央大學化學研究所, 碩士論文, 2003.
  38. [29] "http://airp.org.tw/."
  39. [30] "http://electron.mit.edu/~gsteele/vanderpauw/."
  40. OF A THIN-FILM SNOX CONDUCTANCE-MODULATION CARBON-MONOXIDE SENSOR," Journal of the Electrochemical Society, vol. 126, pp. 627-633, 1979.
  41. [33] X. N. Li, S. E. Asher, S. Limpijumnong, B. M. Keyes, C. L. Perkins, T. M. Barnes, H. R. Moutinho, J. M. Luther, S. B. Zhang, S. H. Wei, and T. J. Coutts, "Impurity effects in ZnO and nitrogen-doped ZnO thin films fabricated by MOCVD," Journal of Crystal Growth, vol. 287, pp. 94-100, Jan 2006.