Translated Titles

Simulation and Verification of GaAs Solar Cells with Mirror Substrates





Key Words

砷化鎵 ; 太陽電池 ; 基板轉移 ; 元件模擬 ; GaAs ; Solar cells ; Substrate transferring ; Device simulation



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Academic Degree Category




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Chinese Abstract

本論文主要針對砷化鎵太陽電池之模擬與驗證,比較以砷化鎵為基板的基板型結構及利用轉移技術將砷化鎵太陽電池轉移至銅基板的薄膜型結構。本文比較兩種結構的差異、優缺點及基板轉移的可行性,並與實際的實驗結果互相比較,驗證模擬結果的可行性。模擬理論根據半導體元件物理理論,數值運算則由Mathematica軟體計算之,且利用商用模擬軟體Crosslight對部份模擬結果作驗證及比較。 從模擬結果中得知,薄膜型結構之太陽電池可以經由AuGe/Au之金屬反射層,再次將未被基極層完全吸收之入射光反射回太陽電池,使得薄膜型結構在長波段的外部量子效率獲得提升,這結果顯示薄膜型結構太陽電池可利用AuGe/Au之金屬反射層在長波段的高反射率,改善使用較薄基極層時,無法將入射光完全吸收的缺點。 在實驗驗證方面,本實驗室將砷化鎵太陽電池由砷化鎵基板轉移至銅基板上,在基極厚度1.5 μm、AM 1.5G、以及元件未披覆抗反射膜的條件下,短路電流密度可由12.6 mA/cm2提升至13.82 mA/cm2,增加9.7%,而轉換效率則可由7.91%提升為8.53%,這結果顯示當砷化鎵太陽電池基極底部鍍有金屬反射層時,的確能適度地提升太陽電池的短路電流密度及轉換效率。

English Abstract

This thesis described the simulation and verification results of GaAs solar cells. Two kinds of cell structures were compared: one is the GaAs solar cell on a GaAs substrate, and the other the GaAs solar cell transferred onto a copper substrate by electroplating. Both the experimental and simulation results were compared, where the simulation calculation was based on the theory of semiconductor device physics, and was calculated by the numerical Mathematica computing software. Some of the simulation was verified using a commercial software, i.e. Crosslight. Details of the advantages, weaknesses, and feasibility of the substrate transferring technique were also disscussed. According to the simulated results, it was found that the incident light was not fully absorbed in the solar cell due to a thinner base layer. The un-absorbed incident light could be further reflected by a AuGe/Au mirror layer and absorbed again by the base layer. Thus the disadvantage of the GaAs thin-film cell with a thinner base layer could be solved by the additional reflection from the AuGe/Au mirror with a high reflectivity within 800~1000 nm wavelength. Moreover, the external quantum efficiency in the long wavelength region and short current density (Jsc) were also increased. In our experimental results, we have transferred the GaAs solar cells from GaAs substrates onto the mirror-coated copper substrates with the base layer thickness of 1.5 μm. The photovoltaic performance of the orginal GaAs solar cell on a GaAs substrate was also measured. Under AM1.5G and without anti-reflective coatings conditions, it is found that the Jsc can increase from 12.6 mA/cm2 to 13.82 mA/cm2, while the conversion efficiency (η) can improve from 7.91% to 8.53%. As a result, the enhanced Jsc and η data of the GaAs solar cells can be contributed by the AuGe/Au mirror between the GaAs solar cell and copper substrate.

Topic Category 工學院 > 材料科學與工程學系所
工程學 > 工程學總論
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