Title

具掩埋式電極發光二極體之研究

Translated Titles

Study on GaN Light Emitting Diodes with Imbeded Electrodes

Authors

盧怡安

Key Words

氮化鎵 ; 發光二極體 ; 無電極 ; 雷射剝離技術 ; 粗化 ; GaN ; LED ; imbedded electrode ; laser lift-off ; roughness

PublicationName

中興大學精密工程學系所學位論文

Volume or Term/Year and Month of Publication

2010年

Academic Degree Category

碩士

Advisor

洪瑞華;劉柏良

Content Language

繁體中文

Chinese Abstract

本論文主要是利用基板轉移技術,配合雷射剝離技術(Laser lift-off;LLO)、乾/溼蝕刻技術(ICP-RIE、H3PO4)、雙面粗化(n-GaN、p-GaN)、高反射鏡面與高熱傳導基板,將其應用於藍光發光二極體,以無電極遮光的n-GaN layer朝上作為出光面,並且探討其元件光電特性及製程可行性。其中p-GaN是磊晶時利用低溫成長方式所產生的六角孔洞作為粗化結構,n-GaN則是在將磊晶膜轉換至結合高反射鏡面之高熱傳基板,雷射剝離將藍寶石基板移除之後,以氫氧化鈉溶液蝕刻成六角錐狀,並探討一般功率型發光二極體(45×45 mil2)在無電極遮光製程後對於光電效率之影響,以及對光取出效率的增益。   電特性方面,元件於基板的轉移過程並未造成電壓變化,隨操作電流加大至 350 mA時,Original-SR-LED(單面粗化-SR、藍寶石基板)、p-side up-DR-LED(p-GaN面朝上、雙面粗化-DR、高熱傳導矽基板)、n-side up-DR-LED(n-GaN面朝上、雙面粗化-DR、高熱傳導矽基板)及n-side up-DR-VBLED(n-GaN面朝上、雙面粗化-DR、垂直導通高熱傳導矽基板)之順向偏壓分別為4.06 V、4.11 V、4.38 V與4.97 V; 在逆向偏壓方面,當在-5 V時,漏電流分別為0.025 μA、0.025 μA 、0.023 μA與0.478 μA,前三結構特性幾乎不變,維持 -5 V時漏電流小於 2 μA的標準,此電特性結果顯示此製程研究之可行性。光特性方面(光強度),未封膠的情況下,以電流 700 mA注入,p-side up-DR-LED、n-side up-DR-LED與n-side up-DR-VBLED相較於Original-SR-LED分別提升119.83 %、158.74 %與26.64 %,研究結果以n-side up-DR-LED所提升效率為最佳,主要以雙面粗化結構為光強度主要提升原因。

English Abstract

Textured n-GaN side up LED with interdigitated imbedded electrodes (IIE) eliminating the electrode-shading loss with high reflection mirror on silicon substrate and double-side roughening both p-GaN and undoped-GaN layers have been investigated. The devices are subsequently fabricated with wafer-bond, laser lift-off and chemical dry/wet etching techniques. The roughness on p-GaN surface was fabricated via low temperature growth, and that on n-GaN surface was made by wet-etching. This n-GaN side up structure was useful to avoid light-absorbing and enhance the light efficiency. We compared the performance of 4-types LEDs: Original-LED/Sapphire with single rough surface(SR-LED), p-side up-LED with double rough surface(DR-LED), n-side up-DR-LED, n-side up-DR-VB(vertical electrodes by wafer bonding)LED. The forward voltage(at 350 mA) of 4-types LEDs is 4.06 V, 4.11 V, 4.38 V, 4.97 V respectively. The luminance intensity of the final 3-types LEDs(at 700 mA) is 119.83 %, 158.74 % and 26.64 % higher than that of the original LED, respectively. The performance of p-side up-DR-LED which is 119.83 % higher than that of original structure, yet worse than n-side up-DR-LED. It was worthy to mention that the area of electrode shading is only 13% of the light emitting area. Therefore, the obtained above results suggest that the optimum thin film LED structure is the n-GaN with double surface roughness and the high reflection mirror.

Topic Category 工學院 > 精密工程學系所
工程學 > 工程學總論
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Times Cited
  1. 林佳樺(2011)。高電壓氮化鎵發光二極體之研究。中興大學精密工程學系所學位論文。2011。1-57。