本研究係利用射頻磁控濺鍍機來製備p型類鑽碳薄膜,利用碳-硼複合靶材,藉由控制硼-碳面積比控制不同硼含量,將薄膜沉積於矽基板上,形成的類鑽碳薄膜經由500℃退火並持溫十分鐘,利用霍爾效應量測其載子型態,可發現硼原子成功的摻雜至類鑽碳薄膜中變成p型類鑽碳薄膜,利用電子微探儀做硼元素之定量分析,拉曼觀察硼摻雜量與退火前後薄膜結構之差別;使用此p型類鑽碳薄膜製作p-DLC/n-Si異質接合型太陽能電池,並製作成不同電極結構做電池效率量測與比較。由研究中發現,硼含量為15.9at%,可得載子濃度為6×1016cm-3,載子遷移率為 100 cm2/V•s,電阻率約為 0.1 Ω-cm,利用此條件的p型類鑽碳薄膜製成Al/ITO/p-C/n-Si/Al 結構,可得最佳效率表現,所得開路電壓為0.43V,短路電流為22.02 mA/cm2,串聯電阻為8.81Ω,電池效率為3.41%。
A boron-doped amorphous carbon film was prepared by radio frequency (r.f.) magnetron sputtering method. The sputtering targets used were composed of boron pieces buried in a graphite disc. The boron-doped amorphous carbon films after annealed at 500 oC showed semiconductor behavior was the stable p-type conduction on the Hall-effect measurement. The p-type amorphous carbon film with a boron content of 15.9 at.% showed a carrier concentration of 6×1016 cm-3, a mobility of 100 cm2/V•s, and an conductivity of 0.1 Ω-cm. By using this p-type film, amorphous carbon heterojunction solar cell with the p-C/n-Si structure was fabricated. The cell photovoltaic characteristics were investigated as function of various electrode structures. The short-circuit current density (Jsc) and efficiency (η) increased from were 4.82 mA/cm2 and 0.25% for the conventional solar cell with an Al electrode layer to 22.02 mA/cm2 and 3.41% for the solar cell with an Al/ITO/p-C/n-Si/Al structure, respectively. The low series resistance (8.81 Ω) leads to a maximum power conversion efficiency of the Al/ITO/p-C/n-Si/Al structure solar cell.