脈衝雷射蒸鍍成長Zn1-xMgxO薄膜光致螢光特性之研究

脈衝雷射蒸鍍法(Pulsed Laser Deposition, PLD)在Zno薄膜應用上已經有很長一段時間，本論文中我們利用這種穩定的製程方式，改善製作優良Zno薄膜，並加以變化。我們在C-Plane藍寶石基板(Sapphire)上沉積氧化鋅鎂薄膜。進而分析X-Ray繞射、常溫的光致螢光(Room Temperature Photoluminescence)、穿透光譜三方面比較分析其結構特性與成分，參雜量變化從1%至50%，在光致螢光上可看到UV光明顯藍移(Blue Shift)，缺陷光得到的紅移(Red Shift)，分析出主要放射能帶2eV、2.28eV、2.38、2.5eV、2.8eV、3.3eV。我們將文獻氧化鋅與氧化鎂的缺陷能階作整合，製程上利用控制氧氣壓力，找出缺陷Zni+、Oi、Ozn並且有效的控制。而在濃度控制之下，缺陷Zni、Mgi 、Zni+也是可控制的因素，在結果上可以做出不同光致螢光的效果，並且在單層膜作出白光。最後薄膜使用退火方式，通入氧氣、氬氣也可以有效的控制缺陷能階，並且也有效的製作出白光的光致螢光。

關鍵字

合金；氧化鋅鎂；脈衝雷射蒸鍍；光致發光；白光；缺陷能階

並列摘要

The pulsed laser deposition (PLD) technique has been widely used for thin films fabrication for a long time , We have grown ZnMgO thin films on C-plane by PLD. The doping percentage of Mg is ranging from 1% to 50%. Our sample was characterized by X-ray diffraction spectroscopy、room-temperature photoluminescence(PL),and transmission spectroscopy. With increasing Mg doping concentration, the blue-shift of UV light band and red-shift of the Visible light were found. The deep level luminescence have several emission components centered at 2eV、2.28eV、2.38、2.5eV、2.8eV、3.3eV. Furthermore, oxygen pressure and Mg doping percentage can control and realize defect engineering. Furthermore, White Light emission of PL with our ZnMgO films have been obtained.

並列關鍵字

Alloy ； ZnMgO ； PLD ； Photoluminescence ； White Light

參考文獻

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脈衝雷射蒸鍍成長Zn1-xMgxO薄膜光致螢光特性之研究

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