低雜訊放大器是通訊系統中相當重要的前級零組件,因為訊號從天線進來之後,立刻要透過低雜訊放大器來放大,所以它決定了整個系統的雜訊指數以及輸入的電壓駐波比。而寬頻放大器亦有多種應用,如高速的光波系統中做為基頻放大器,在感測器、微波及毫米波通訊系統或是一個寬頻結構中當作是一個放大單元來使用。 在本論文中使用TSMC 0.35 SiGe製程來設計超寬頻低雜訊放大器電路,採用電流再使用式低雜訊放大器架構,在相同的消耗功率下提供比傳統低雜訊放大器架構較大的增益,且提供2-11GHz頻寬,應用於WiMAX、UWB等寬頻系統。操作在2 - 11 GHz全頻段內,在3.3V供給電壓下,其功率消耗為19.99 mW,其最大增益為17.85dB,增益平坦度為±0.905 dB,最小雜訊指數為2.26 dB,其IIP3為-11 dBm 以及P1dB 為-20.2 dBm。此設計已取得國家晶片中心下線資格,並已進入下線製作流程。
The low noise amplifiers (LNA’s) are essential components in communication system front end in wireless local area networks (LAN’s), satellite links, and radiometric sensors. It dominates the noise figure and input voltage standing-wave ratio (VSWR) of the overall system because the first block signal fed from the antenna is the LNA. On the other hand, ultra-wideband amplifiers are widely used as baseband amplifiers in high-speed lightwave systems and gain blocks in microwave/millimeter-wave communication and sensor systems or in wideband instruments. In this design, it employed the TSMC 0.35um SiGe process to design a Current Reuse low noise amplifier, for applications of the wideband system, such as WiMAX, Ultra wideband(UWB), and etc. The results demonstrate the performances of the proposed design following as: The total power consumption is 19.99 mW under 3.3V supply voltage, The maximum power gain of 17.85dB for 2 - 11 GHz wideband frequency and the gain flatness is less than ±0.905dB in band, minimum noise figure of 2.26dB, the IIP3 of -11 dBm, and the P1dB of -20.2 dBm. This design has obtained tapeout permission from National Chip Implementation Center (CIC) and gone into fabrication process already.