一維豆莢結構金-氧化鎵奈米元件之研究

The Investigation of 1-D Gold-Peapodded Ga2O3 Nanodevices

簡鈺人(Yu-Ren Jian)

指導教授 ： 周立人 ； Li-Jen Chou

國立清華大學/工學院/材料科學工程學系/碩士(2007年)

https://doi.org/10.6843/NTHU.2007.00692

摘要

在半導體材料中，特別是一維的奈米材料在電學和光學上面有獨特的特性，而且近來已經被應用當做奈米光電元件的材料。在我們實驗室研究中指出在I-V測量中顯現出β-Ga2O3是一種良好的絕緣體材料，這是因為氧化鎵本身是一種寬半導體能隙的材料有關。在沒有光照的情況下，絕緣體性質的結果可以從金奈米顆粒嵌入氧化鎵奈米線的I-V測量數據得知。由於奈米貴重金屬顆粒嵌入介電質材料的光學以及電學不尋常特性，所以目前已經引起很大的興趣產生。新奇的一維豆莢金-氧化鎵奈米線是用金、鎵和二氧化鎵在800℃下在簡單的熱退火情況下反應生成。
由於金奈米顆粒有表面電漿共振的現象產生，所以用Nd:YAG雙頻率雷射光源(Laser century Technology, model GL532T)在一般大氣壓、室溫情況下測量得知532nm和632nm中對光反應的量測結果。此外，在我們的研究中宣稱新奇金奈米顆粒嵌入氧化鎵奈米線是未來下一個半導體工業時代的光電元件。
從室溫條件下金奈米顆粒嵌入氧化鎵奈米線的光激發光譜量測結果中，可以值得討論的是發現在600nm波段範圍中有強的紅-橘散發光譜。而且明顯可見的紅橘光可以從肉眼觀察，這種現象在以往的研究還未被發現過。我們推測這種清晰可見的光源是由金奈米顆粒嵌入氧化鎵奈米線結構中的金和氧化鎵之間的鍵結所造成。

關鍵字

奈米 ； 元件

並列摘要

Semiconducting nanoscale structures, especially one dimensional nanomaterials offer unique and novel electronic and optical properties, and have been applied in many optoelectronic nanodevice. There have been reported that pure β-Ga2O3 reveals an excellent insulator from the I-V measurement at room temperature due to the wide band gap feature in our group study. Under no laser illumination, the same phenomenon was observed form I-V measurement of gold-peapodded Ga2O3 nanowires. But noble-metal nanoparticles encapsulated in a dielectric matrix have attracted interest owing to their unusual optical and electrical properties. The novel metal-insulator heterostructure of gold-peapodded Ga2O3 nanowires, formed by the reaction of gold, gallium, and silica at 800℃, is successfully achieved by a simple thermal annealing process.
Due to the surface-plasmon-resonance (SPR) effects of gold nanoparticles embedded in the dielectric matrix, the photo-response behavior of gold-peapodded Ga2O3 nanowires was characterized by using a double frequency Nd:YAG laser (Laser century Technology, model GL532T) with wavelength of 532 nm and 632nm under atmosphere and room-temperature conditions. In addition, the novel photo-switch of gold-peapodded nanowires in present study demonstrates the promising building blocks to perform the future optoelectronic devices in next generation semiconductor industry. From the room-temperature photoluminescence spectra of gold-peapodded Ga2O3 nanowires, it is noteworthy that the broad and strong red-orange emission centered at wavelength of 600nm. And the light source shows the vivid red-orange color was observed by the naked eye. Such phenomenon is first observed in our study and it supposes that the vivid light source is ascribed the interface bonding of the gold particles and β-Ga2O3 nanostructure

並列關鍵字

nanowire ； Ga2O3 ； gold

參考文獻

[42] Palph M. Potter, John M.Blank, and Arrigo Addamiano

[39] Xiang feng Duan, and C.M. Liber

[38] G.S.Cheng, L.D. Zhang, Y.Zhu,and G.T. Fei

[17] H. Z. Zhang, Y. C. Kong, Y. Z. Wang, X. Du, Z. G. Bai , J. J. Wang , D.P. Yu, Y. Ding, Q.L. Hang, and S. Q. Feng

[1] Y. Huang, X. Duan, Y. Cui, and C. M. Lieber,