我們透過C-N coupling和C-B coupling的方式,成功地合成出雙二甲基苯基硼化合物FNB01~FNB07(六種)。此系列化合物具有不錯的熱穩定性,Tg溫度為100~141 0C,而且有好的成膜性。依不同π軌域共軛程度,此系列化合物在固態薄膜下的放光從藍光456 nm到綠光510 nm,而且在不同極性溶劑下,具有溶劑效應(solvent effect),也就是會受到極性的溶劑影響,放光波長會紅位移(red shift)。此外,在正已烷溶劑下,螢光量子產率高達81~99 %。在元件製作上,此系列化合物當作非摻雜發光層,具有高的藍光純度,非常接近NTSC所訂定藍光位置(0.14,0.08),而且有非常窄的半高波寬(FWHM)約44~69 nm。以FNB01、FNB04和FNB07當發光層材料所做出來元件結果,元件B: ITO/m-MTDATA(10)/NPB(30)/FNB01(20)/TPBI(10)/ Alq3(30) /LiF/Al,元件外部量子效率(ηext)為3.42 %,電流效率(ηc)為2.65 cd/A,最大亮度(Lmax)為13320 cd/m2,CIE座標為(0.14,0.08);元件F:ITO/m-MTDATA(10)/NPB(30)/FNB04(30)/ TPBI(10)/Alq3(30)/ LiF/ Al,元件外部量子效率(ηext)為5.02 %,電流效率(ηc)為3.99 cd/A,最大亮度(Lmax)為8617 cd/m2,CIE座標為(0.13,0.09);元件I:ITO/m-MTDATA(10)/NPB(30)/FNB07(30)/ TPBI(10)/Alq3(30)/LiF/ Al,元件外部量子效率(ηext)為2.82 %,電流效率(ηc)為2.81 cd/A,最大亮度(Lmax)為11216 cd/m2,CIE座標為(0.14,0.11)。
We synthesized compounds based on C-N coupling and C-B coupling, and we synthesized six kinds of bis(2,6-dimethylphenyl) boron compounds successfully. They were FNB01~FNB07, respectively. This series compound had good thermal stability, and Tg temperatures were 100~141 0C. Moreover, they formed good thin-film readily. According to different π orbital conjugate ability, this series compounds in solid state PL emission from 456 nm to 510 nm. Moreover, this series compounds showed strongly solvent-dependent emission band, and we called solvent effect. In other words, the emission spectrums of these compounds shift toward a longer wavelength with the increasing polarity of the solvents. By in n-hexane solvent, the fluorescence quantum yield reached 81% to 99%. In the devices, this series compounds used as non-doped emission layers, had high blue light purity, and extremely approaches NTSC to subscribe decided the true blue light coordinates of (0.14, 0.08). Moreover, they had extremely narrowly full-width-half-maximum (FWHM), about 44 nm to 69 nm. We used FNB01, FNB04, and FNB07 as emission layers. Device B: ITO/ m-MTDATA(10)/NPB(30)/FNB01(20)/TPBI(10)/Alq3(30) /LiF/Al, this device can achieve a external quantum efficiency(ηext) of 3.42%, current efficiency(ηc) of 2.65 cd/A, maximum brightness(Lmax) of 13320 cm/m2, and CIE coordinates of (0.14,0.08). Device F: ITO/m-MTDATA(10)/NPB(30)/FNB04(30) /TPBI(10)/Alq3(30)/LiF/Al, this device can achieve a higher external quantum efficiency (ηext) of 5.02%, current efficiency(ηc) of 3.99 cd/A, maximum brightness (Lmax) of 8617 cm/m2, and CIE coordinates of (0.13, 0.09). Device I: ITO/m-MTDATA(10)/NPB(30)/FNB07(30) /TPBI(10)/Alq3(30)/LiF/Al, this device can achieve a lower external quantum efficiency(ηext) of 2.82%, current efficiency(ηc) of 2.81 cd/A, a higher maximum brightness(Lmax) of 11216 cm/m2, and CIE coordinates of (0.14, 0.11).