Title

硫摻雜輔助P型氧化鋅薄膜與奈米結構研究

Translated Titles

Sulfur assisted realization of p-type Zn0 thin film and nanostructure

Authors

李英瑋

Key Words

氧化鋅 ; 硫化製程 ; P型薄膜 ; Sol-gel製程

PublicationName

清華大學材料科學工程學系學位論文

Volume or Term/Year and Month of Publication

2012年

Academic Degree Category

碩士

Advisor

吳振名

Content Language

繁體中文

Chinese Abstract

氧化鋅(ZnO)為ⅡⅥ族半導體材料,因為其高能隙值3.37eV及高激子束縛能60meV等材料性質,有非常多的應用領域如發光二極體、光催化材料、全透明電子元件等光電元件材料。但難以製備電性良好的p-type氧化鋅侷限了氧化鋅的發展空間,目前難以製備穩定p-type氧化鋅可以歸因於,摻雜物在氧化鋅中的溶解度太低與摻雜物活化能量太高等因素,因此如何提升溶解度與降低活化能成為很重要的課題。因此Persson et al.提出藉由摻雜等價元素硫以降低活化能的方式,希望以此降低摻雜物的活化能量。 本研究主要分三部分,第一部分是使用硫化後氧化兩階段熱處理方式將硫摻雜到以溶膠-凝膠法(Sol-gel method)製備的氧化鋅薄膜,用各種分析儀器去驗證硫的摻雜與比較摻雜前後性質差異。第二部分是以溶膠-凝膠法製備p-type氧化鋅薄膜,實驗選用了三種不同元素鋰、銅、氮做為p-type摻雜物。觀察不同退火溫度及摻雜濃度對p-type氧化鋅電性的影響,並藉由分析晶體結構、光學性質與化學鍵結的方式去探討薄膜內部缺陷的變化去解釋電性的轉變。第三部分是將成功鍍製的p-type氧化鋅薄膜進行硫化後氧化兩階段熱處理流程,觀察此一製程對p-type氧化鋅薄膜的電性與基本材料性質造成的影響。

Topic Category 工學院 > 材料科學工程學系
工程學 > 工程學總論
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