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  • 學位論文

以迴旋濺鍍法成長氮化鋁薄膜之機制探討

The Discussion of AlN Thin Film Growth Mechanism by Helicon Sputtering Method

指導教授 : 高慧玲
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摘要


中文摘要 氮化鋁由於具有優異的壓電特性及較高之表面聲波波速,已成為發展高頻聲波元件之最佳選擇,而其製程與IC發展相容,且具高介電常數、高體電阻、低介電損失等,以及與氮化鎵有相同晶格結構,較小的晶格不匹配(Lattice mismatch ~2.4%)亦使之具有應用於以氮化鎵為基礎的MISFET高功率元件的潛力。此外,氮化鋁也曾是在Sapphire基板上成長氮化鎵之Buffer layer。為減少氮化鎵之製程成本及材料缺陷,並使光電與電子元件整合,將氮化鎵成長於矽基板上成為吸引人的課題,而熱穩定性高、製程容易之氮化鋁乃是其中緩衝層之最佳選擇。 本研究之目的,將分別在SiO2/Si(100)、Si(111)及GaN/Sapphire基板上沈積(002)高排向氮化鋁薄膜。本實驗室為成長具高表面平整度之氮化鋁薄膜,過去已建立一套迴旋濺鍍系統,此系統因在一般磁控濺鍍機上增加一電磁線圈,使電漿可以在較低壓力~(10-4Torr)下維持,而增加被鍍粒子之平均自由徑,使薄膜可以在類分子束磊晶(MBE like)機制下成長,改善其緻密度及表面平整度。 我們成功的利用迴旋濺鍍系統在SiO2/Si(100)、Si(111)及GaN/Sapphire基板上沈積(002)高排向與高平滑度之氮化鋁薄膜,並且建立其成長機制之模型。其中,(002)高排向氮化鋁薄膜Rocking curve的半高寬值分別為:2.55∘、2.3156∘及0.9102∘,而R.M.S.表面粗糙度分別為9.23Å、4.75Å及8.79Å。此良好的AlN薄膜提供表面聲波元件、MISFET高功率元件及GaN Buffer layer研究的可能。 關鍵字:氮化鋁、迴旋濺鍍系統、低壓成長

並列摘要


Abstract Aluminum Nitride(AlN) films are highly attractive due to their excellent piezoelectricity, high surface acoustic wave velocity, large energy gap and good temperature stability. It has been a good choice to develop AlN high frequency acoustic wave devices as well as GaN-base MIS-FET with AlN as dielectrics. In addition, since AlN has been the buffer layer between GaN and Sapphire for optoelectronics, to decrease the cost of process and the defects of materials and to integrate photoelectric and electric devices, AlN may be able to play the role of buffer layer for the growth of GaN on Si. The aim of this thesis is to deposit highly quality (002)AlN films on SiO2/Si(100) 、Si(111) and GaN/Sapphire substrates using Helicon sputtering, to accomplish the above mention application. The Helicon Sputtering System is a magnetron sputter system enhanced with an inductivity coupled rf plasma, in which the plasma can be sustained in a gas atmosphere of 10-4Torr. Since the mean free path of the atoms can be increased, using this “MBE like” sputtering process can produce a smooth surface. Highly textured smooth (002)AlN films have been successfully deposited on SiO2/Si(100) 、Si(111) and GaN/Sapphire substrates in low-pressure(1mTorr) of Helicon sputtering system. The FWHM of (002)AlN films are 2.55∘、2.3156∘and 0.9102∘,and the R.M.S. roughness are 9.23Å、4.75Å and 8.79Å, respectively. The deposition process as well as the model of growth mechanism are established and discussed. Keywords: AlN, Helicon sputter, low pressure

並列關鍵字

low pressure AlN Helicon sputter

參考文獻


43. 邱尉育, ”氮化鋁薄膜光學特性及其應用”, 民國90年七月
1. James R. Phillips. Sr. Member of Technical Staff. CTS Wireless Components,“PIEZOELECTRIC TECHNOLOGY PRIMER”, 4800 Alameda Blvd. N. E. Albuquerque, New Mexico 87113
3. R. M. White, and F. W. Voltmer,“Direct piezoelectric coupling to surface elastic waves”, Appl. Phys. Lett. 7, pp. 314-316, 1965.
4. S.M. Hubbard , D. Pavlidis, V. Valiaev , M.A. Stevens-Kalceff , I.M. Tiginyanu, “Electrical characterization and cathodoluminescence microanalysis
6. E. Alckseev, A. Eiscnbach and D. Pavlidis, “Low interface state density AlN/GaN MISFETs”, ELECTRONICS LETTERS, Vol 35, NO. 24 20th November 1999.

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