本論文研究主要針對離子敏感型場效應電晶體在晶圓層次的特性分析,臨界電壓變異量、離子感測器應用於流體注入式分析(Flow Injection Analysis ,FIA)的特性分析,包含流體速率對感測器靈敏度的影響、流體速率對時漂影響、流體速率對感測器溫漂的影響,將所得到的相關數據進行統計與交叉分析,研究ISFET在何種的流速與溶液溫度會有最大的靈敏度。使用HP-4155半導體參數分析儀量測ISFET晶圓上的臨界電壓分佈,並且設計一數位電路補償ISFET的準位誤差,降低了輸出電壓準位差達97.3%,為了使得離子檢測系統能有更低功率消耗,提出了一以個臨界電壓萃取器為架構的ISFET讀出電路,其消耗功率只有280.5uW,使用差動減法電路與臨界電壓萃取器補償溫度效應,補償後的溫度係數只有0.02mV/℃。
The purpose of this research On-Wafer performance analysis for ISFET sensor. Include the variation of threshold voltage and Flow Injection Analysis for ISFET. Impact on sensitivity 、drift 、temperature coefficient(TCF) of the sensor of the flow rate of fluid. Used the HP-4155 Semiconductor Parameter Analyzer to gauge MOSFET threshold voltage. Design a digital circuit to Calibration inaccuracy of voltage level . Decreasing the inaccuracy of voltage level 97.3%. In order to reduce the power consumption of the ISFET Readout circuit. Propose a threshold voltage Extractor-type ISFET Readout Circuit .It’s power consumption only 280.05uW. Temperature compensation circuit used the subtraction circuit and VT extractor .The temperature coefficient of ISFET readout circuit with temperature compensation is 0.02mV/℃