合成高純度及高產率的氮化鎵奈米線

Synthesis of High-Purity and -Quality Gallium Nitride Nanowires

陳俊和(Chen Chun Ho)

指導教授 ： 陳家俊

國立臺灣師範大學/理學院/化學系/碩士(2000年)

摘要

我們藉由鎵、氨氣和不同的催化劑，成功的以VLS機構製備高純度且高產率的氮化鎵奈米線。由掃描式電子顯微鏡可知成長出的氮化鎵奈米線的平均直徑為10-50奈米，而長度可達到數個微米。由X-ray繞射儀及高解析度穿透式電子顯微鏡的鑑定，可知大部分的氮化鎵奈米線均為wurtzite的單晶結構，且晶體的成長方向大都為[110]。螢光光譜也顯示了3.38eV處wurtzite結構氮化鎵的能隙放光。在場發射測量中，低的起始電場顯示了氮化鎵奈米線在場發射應用上有很大的潛力。藉由高純度及高產率的製造方式，我們可以研究氮化鎵奈米線這種一維奈米材料的基本物理化學性質，並可更進一步探討其光電元件應用上的可行性。

關鍵字

氮化鎵 ； 奈米線

並列摘要

Though vapor-liquid-solid (VLS) mechanism, we have successfully produced high-purity and -quality gallium nitride nanowires. It is shows using scanning electron microscopy (SEM) that the diameter of resulting nanowires range from 10 to 50 nm with length of several micrometers. Furthermore, X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) have been applied to identify the crystal structure of the individual gallium nitride nanowire. The results revealed that most of them are single crystalline wurtzite phase with a growing direction of [110]. Photoluminescence spectra also showed a strong band-edge emission of wurtzite gallium nitride crystal at 3.38eV. In the field emission studies, it has a potential application on low turn-on field of gallium nitride nanowires. Through the way of producing high-purity and -quality gallium nitride nanowires, we have investigated their fundamental properties as well as their potential in optoelectronic devices.

並列關鍵字

GaN ； nanowire

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