利用電漿處理達成氮化鎵發光二極體電流擴散之研究方法

Current Spreading of GaN Light-Emitting Diodes Using Plasma Treatment

潘科豪

輸出功率 ； 電流分佈 ； CBL ； LED ； current spreading

成功大學光電科學與工程研究所學位論文

2006年

碩士

張允崇;李清庭

英文

本論文的研究目的是利用電漿處理改善氮化鎵發光二極體的結構輸出功率，希望藉由改善電流分佈，以獲得良好的光電特性。將利用電流堵塞層改善發光二極體發光效率之概念，運用於本文，首先嘗試使用各種電漿處理p型氮化鎵，並以傳輸線模型找出最佳電漿絕緣條件，並利用此最佳條件在p型金屬接墊底下做近似絕緣的電漿處理，以期望達成杜絕p型電極注入電流向接墊下方流通之現象，因為接墊下方所發出的光源，容易被接墊遮蔽或反射後被材料本身所吸收，進而造成光輸出的損失，所以接墊下方電流的減少將使發光二極體獲得更高的輸出功率。

The research in this paper is to improve the light output power of the GaN-based light emitting diodes (LED), we try to obtain better optical and electrical properties by making the current distribution uniform. In this paper, we used several kinds of plasma on p-GaN, and try to find the optimal insulating condition by using transmission-line method (TLM). We expect to let the bottom of the p-pad region nearly insulated by using the optimal plasma treatment condition. Because the light below the p-pad will be eclipsed or reflected by the thick p-pad, this result will reduce the efficiency of output power. Therefore, we could get the higher output power by reducing the current below the p-pad region.

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