相異輕摻雜區濃度之高壓金氧半場效電晶體其熱載子可靠度之研究

Hot Carrier Reliability of High Voltage MOSFET for Different Lightly Doped Drain Doping Concentration

沈尚鋒

高壓金氧半場效電晶體 ； 輕摻雜汲極 ； 熱載子導致之退化 ； 電腦輔助設計模擬 ； HVMOSFET ； LDD ； hot-carrier-induced degradation ； TCAD simulation

成功大學微電子工程研究所學位論文

2017年

碩士

陳志方

英文

在本論文中，我們探討不同輕摻雜汲極(Lightly Doped Drain)濃度元件之可靠度分析，主要研究不同輕摻雜汲極濃度的高壓(HV)金氧半場效電晶體(MOSFET)元件之特性與受熱載子應力後產生的退化與元件生命週期(lifetime)之預測與探討。 首先，針對高壓金氧半場效電晶體元件在現今生活中的應用與其優點特色作簡介。再來描述本論文的研究動機，對於不同輕摻雜汲極濃度所造成不同基板電流大小之現象，針對此方面作更深入的研究。在本論文中亦會介紹元件所產生基板電流的機制、熱載子效應與元件可靠度分析、和運用電腦輔助設計(TCAD)模擬加以分析元件內部電特性。 在基礎介紹後，開始呈現此研究的元件結構與定義其元件內部區域並且陳述元件的量測設定與方法，其中包含:元件電流ID-VG、ID-VD、基板電流ISUB-VG、崩潰電壓VBD以及片電阻RS之量測。 本研究主要會探討不同的輕摻雜汲極濃度之元件的熱載子可靠度分析並且比較不同輕摻雜汲極濃度之元件的生命週期。本文會先介紹我們量測熱載子應力的實驗設置與偏壓條件，且使用電腦輔助設計模擬輔助量測結果。分析結果顯示較高的輕摻雜汲極濃度之元件有較長的生命週期，但其基板電流卻也有較高的趨勢。因此藉由電腦輔助設計了解其電流路徑與在不同元件中放置界面缺陷(Nit)於衝擊離子化效應最嚴重區域，並解釋較高的輕摻雜汲極濃度之元件具有較長的生命週期卻也具有較大的基板電流之現象。

In the thesis, we study the reliability analysis of different lightly doped drain (LDD) doping concentrations device, and mainly research the characteristics of the high voltage metal-oxide-semiconductor field effect transistor (HV-MOSFET) devices with different LDD doping concentrations and the device degradation after the hot carrier stress and the prediction and discussion of device lifetime. First, the application and the advantages of HV-MOSFET were illustrated. This thesis motivation of high-voltage device with different LDD dosage was presented. For the different LDD dosage caused the phenomenon of different substrate current (ISUB) magnitude, so for this aspect will be more detailed study. In this thesis, the mechanism of substrate current generation, hot carrier effect, and reliability analysis were performed. Also, the use of technology computer aid design (TCAD) simulation to analyze the internal electrical characteristics of devices. After the introduction of the basic characteristics, the structure of the devices, defined the internal region of the device, and the measurement setup and methodology were also described. Including device current ID-VG, ID-VD, substrate current ISUB-VG, off-state breakdown voltage VBD, and sheet resistance RS. This study will mainly investigate the hot carrier reliability analysis of different LDD dosage devices and compare the lifetime of devices with different LDD dosage. This thesis will introduce our measurement setup of hot carrier stress and bias conditions, and the TCAD simulation was used to confirm the measurement data. The results show that the device with higher LDD dosage has a longer lifetime, but the substrate current also has a high trend. The TCAD was used to simulate the current flowline and put the interface state (Nit) to different devices in the most serious region of the impact ionization rate and to explain the higher LDD dosage of the device has a longer lifetime but also has a large substrate current phenomenon.

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