增加焦電層之時變溫度率可有效提升焦電元件之電性輸出。本研究先以有限元素分析焦電層結構設計與時變溫度率之影響性,並以一快速氧化鋅厚膜製程製作焦電獵能元件,主要以氣膠沉積法搭配陰影遮罩製作多層式氧化鋅厚膜結構,並以二氧化碳雷射進行快速退火與爐管退火相互比較。由模擬結果得知,部分覆蓋型焦電層之孔槽寬度1μm及深度15μm時,與全覆蓋型焦電層相比,其時變溫度率提升約24.79%,因此具孔槽結構之焦電層,可有效地提升時變溫度率。實驗結果得知,具三維結構之部分覆蓋型氧化鋅焦電獵能元件與全覆蓋型氧化鋅焦電獵能元件,於溫度200℃及週期36秒下,其電流、電荷及開路功率之百分比差異值分別為534.87%、532.42%及563.57%。以氣膠沉積之氧化鋅焦電層於退火後呈現多孔隙結構,此多孔隙焦電層結合類梳狀三維結構,因表面積增加,使熱接觸面積也大幅提升。以二氧化碳雷射退火製作焦電獵能元件,其輸出電性與高溫爐管退火相接近,而時間僅為高溫爐管退火的1/15,可證明本研究之快速氧化鋅厚膜製程能於短時間內製作出品質優良及輸出電性佳之氧化鋅焦電獵能元件。
Increasing temperature variation rates in pyroelectric layers can effectively enhance the electrical outputs of pyroelectric devices. In the present study, the structures of pyroelectric layers were designed for improving the temperature variation rate by finite element method. An aerosol deposition (AD) rapid process with the shadow mask method, the furnace and the laser annealing was applied for depositing a three dimensional ZnO film on the silicon substrate and applying to pyroelectric generators. In the simulation results, the partially covered type with a 1μm trench width and a 15μm trench deep could improve the temperature variation rate about 24.79% than the fully covered type. Therefore, the trench structure in pyroelectric layers is useful to ameliorate the temperature variation rate. In the experimental results, the partially covered type with the three dimensional ZnO layers under the conditions of 200℃ temperature and 36s period had a higher current, charge and open power than the fully covered type about 534.87%、532.42%及563.57% respectively. The ZnO layers with the annealing process appeared a porous structure which increased the surface area and the thermal contact area. The performances of ZnO films treated with the laser annealing approached to that with the furnace annealing. The furnace annealing was fifteen times the duration of laser annealing. Hence, the AD rapid process can deposit ZnO thick films with high performances, and then fabricate pryroelectric generators with high electrical outputs.