快速氧化鋅薄膜製程於焦電元件之應用

A Rapid Process of ZnO Films Applied on Pyroelectric Devices

余士源

氧化鋅 ； 氣膠沉積法 ； 電極 ； 焦電效應 ； 三維薄膜結構 ； 雷射退火 ； Zinc oxide ； Aerosol deposition ； Electrode ； Pyroelectricity ； Three-dimensional film ； Laser annealing

虎尾科技大學機械設計工程研究所學位論文

2012年

碩士

蕭俊卿

繁體中文

增加焦電薄膜之時變溫度率可以有效提昇焦電元件之焦電響應。本研究發展一套快速氧化鋅薄膜製程，並應用於可撓式聚醯亞胺基材與氮化矽/矽基材上製作焦電感測元件，主要以氣膠沉積法搭配膠片遮罩於短時間內製作三維氧化鋅薄膜結構，並以二氧化碳雷射進行快速退火。由實驗結果，以氣膠沉積之氧化鋅薄膜於退火後呈現多孔隙結構，其結構以有限元素法證實較深之孔隙能提升焦電層時變溫度率約20.7%。而多孔隙之焦電層結合三維結構，使其表面積大幅增加，對熱吸收率也大幅提升，與單層焦電結構相較可提升響應值約33.0%。以二氧化碳雷射退火製作之三維結構焦電感測器，其電壓響應值與以高溫爐管退火相接近，而時間僅為高溫爐管退火的1/12，可證明本研究之快速氧化鋅薄膜製程能於短時間內製作出薄膜品質優及焦電響應高之氧化鋅焦電感測元件。

Increasing temperature variation rate in pyroelectric films is a useful method for enhancing the responsivity of pyroelectric devices. In the present study, an aerosol deposition (AD) rapid process for three-dimensional ZnO films deposited on substrates of silicnon nitride/silicon and polimide was applied on pyroelectric devices by laser annealing and shadow mask. The results indicated that a porous ZnO film was successfully produced by AD with annealing. The deeper cavities in films could enhance the temperature variation rate about 20.7% by finite element method. Three-dimensional ZnO films with the porous structure induced lateral temperature gradients on the sidewalls of the responsive element for increasing the temperature variation rate, and large surface area for improving the heat absorption. The responsivity of pyroelectric devices with three-dimensional ZnO films was higher than that with a single ZnO layer about 33.0%. Moreover, the responsivity of pyroelectric devices with ZnO films treated by laser annealing was similar to that by furnace annealing. The furnace annealing was twelve times the duration of laser annealing. Hence, AD with laser annealing can speedily deposit ZnO films with high quality, and then fabricate ZnO pyroelectric devices with high responsivity.

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