成長後退火對有機薄膜電晶體之電性影響探討

Post-Annealing Effect on the Performance of Organic Thin-Film Transistors

趙守敬(Shio-Jing Chao)

指導教授 ： 陳方中 ； HASH(0x19d78430) ； 田仲豪

國立交通大學/電機學院/光電工程系所/碩士(2012年)

https://doi.org/10.6842/NCTU.2012.00921

摘要

本研究利用四駢環類的材料為有機主動層材料、聚乙烯醇肉桂酸酯為有機介電層材料，以金為電極製做出頂電極結構之有機薄膜電晶體，我們發現經由成長後退火處理可以提高元件之載子遷移率表現，進而去研究載子遷移率上升的原因，我們發現成長後退火會改變主動層的結晶型態、表面形態以及降低了利用轉換線法所萃取之接觸電阻。本實驗最佳化條件其電流關關比可至3.8x103，載子遷移率可達0.092 cm2/Vs。

關鍵字

成長後退火 ； HASH(0x19d7f7c0) ； 載子遷移率

並列摘要

In this study, we fabricated top contact organic thin film transistors with poly(2,5-bis(thiophene-2-yl)-(3,7-ditri-decanyltetrathienoacene) as active layer. The dielectric layer and source/drain electrodes were fabricated with poly(vinyl cinnamate)(PVCN) and Au, respectively. We found that the device performance were improved apparently after post-annealing. We realized that post-annealing could change the polymer morphology and improve the crystallization of the active layer. The contact resistances, which were extracted following the transfer-line method, were reduced after post-annealing. The optimized device exhibited a mobility of 0.092 cm2/Vs and an on-off ratio of 3.8x103.

並列關鍵字

Post-annealing ； HASH(0x19d7f9a0) ； mobility

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