Translated Titles

New Variables for AC Simulation of 1–D Semiconductor Devices



Key Words

交流 ; ac



Volume or Term/Year and Month of Publication


Academic Degree Category




Content Language


Chinese Abstract

在這篇論文中,我們使用新變數來處理一維元件之AC模擬,同時,使用兩種方法來執行模擬,其一是經由內部模擬器來進行,另一個是經由外部模擬器,也就是我們實驗室所開發的AC_CKT 電路模擬器來執行。我們會介紹AC_CKT的使用方法並用幾個範例來介紹輸入檔的撰寫格式,然後我們以一個金氧半電晶體來做驗證,在不同頻率下量測其C-V曲線,最後比較兩種方法得到的模擬結果。

English Abstract

In this thesis, we use new variables to process 1-D device ac simulation. We develop two methods for ac simulation. One is through the internal ac solver. The other is through AC_CKT simulator which is developed by our group. We will introduce the AC_CKT simulator and use some examples to show how to write the input file for the AC_CKT simulator. Then, we use an MOS capacitor as an example to measure the C-V curve under different frequencies. Finally, we will compare the simulation results of the two methods.

Topic Category 資訊電機學院 > 電機工程學系
工程學 > 電機工程
  1. [1] C.-L. Teng, “An equivalent circuit approach to mixed-level device and circuit
  2. [2] S. J. Li, C. H. Ho, C. N. Liao, and Y. T. Tsai, “Log-scale method with equivalent circuit model in semiconductor device simulations, ” to be appeared in Journal of the Chinese Institute of Engineers.
  3. Simulation,” M. S. Thesis, Institute of EE, National Central University, Taiwan,
  4. Republic of China, Jun, Chapter 2, pp. 5-10, 1997.
  5. [3] C. Durney, L. D. Harris, and C. L. Alley, Electric Circuits, Taipei Publications Trading Company, Chapter 2, pp. 28-37, 1982.
  6. [4] S. Franco, Electric Circuits Fundamentals, Saunders College Publishing, Chapter 13, pp. 576-584, 1994.
  7. [5] H. C. Casey, Jr. Devices for Integrated Circuit Silicon and III-V Compound Semiconductors, John Wiley & Sons, Inc, Chapter 7, pp. 308-314, 1999.
  8. [6] Spice: A Guide to Circuit Simulation and Analysis Using PSpice, 3rd ed., Paul W. Tuinenga, Prentice Hall, 1995.