電鍍Cu2O薄膜之表面微觀結構與光電特性之研究

本實驗以電化學沉積Cu2O膜層。藉由改變外加電壓與電鍍液pH值並利用XRD與SEM探討p-Cu2O薄膜之元素成分及表面結構。利用UV、Hall，分別探討薄膜的光性、載子濃度、遷移率。從實驗中可得知，薄膜之織構會因溶液之pH 值或外加電壓之變化而轉變。於低pH/低外加電壓下得到(200)織構之氧化亞銅薄膜，其晶粒形狀為四面體之金字塔型，而高pH/高外加電壓時，則得到(111)織構之薄膜，晶形為三角形。藉由UV檢測得知，Cu2O對紫外光具有良好的吸收性，經由換算後可得知能隙為2.60eV。利用濺鍍法制備AZO於ITO玻璃上，再以電化學沉積Cu2O膜層。利用I-V量測系統探討膜層光電特性。

關鍵字

氧化亞銅；電鍍

並列摘要

In this study, Cu2O deposition layer was syhthesized by electroplating method. With the various electric current and pH values in electroplating bath, the compositions of p-Cu2O layer and its surface morphology was researched by XRD and SEM. Also, the optical properties, carrier concentration and mobility were concluded by UV spectrometer and Hall effect measurement. Consequently, the structure of deposition layer changed with the electric current and pH values of electroplating bath. Tetrahedron Cu2O(200) was obtained in lower pH/electric current. On the other hand, Cu2O(111) triangle crystalline was syhthesized in higher pH/electric current. With the analysis of UV spectrometer, ultraviolet (UV) band was absorbed by Cu2O layer and energy gap of Cu2O is 2.60 eV which was calculated from UV analysis. AZO sputter deposition layer was prepared on ITO glass. Then, Cu2O electroplating layer was plated to form a binary film. The optical-electrical properties were evaluated by I-V measurement.

並列關鍵字

electrodeposited ； Cu2O

參考文獻

[36] 溫文杰, 「電漿氣氛對射頻磁控濺鍍法沉積AZO薄膜特性影響之研究」, 碩士論文, 大同大學, 民國97年。

[35] 李岳勳, 「微/奈米化氧化亞銅之電化學沈積行為及其在鋰離子二次電池之應用」, 博士論文, 國立成功大學, 民國95年10月。

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電鍍Cu2O薄膜之表面微觀結構與光電特性之研究

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