摘要
YIG（Y3Fe5O12）為磁光元件與磁記憶等科技之重要材料，其中尤以薄膜型式應用最為廣泛。YIG薄膜常以脈衝雷射（pulsed laser deposition, 簡稱PLD）方式製備，而鍍膜所需的靶材（target），是以高溫燒結氧化釔與氧化鐵的均勻混合物而成。本文詳述YIG靶材的製作過程，包括原料、原料的配置、混合與研磨、高壓製靶的經過、燒結的條件和程序，以及成品分析等。粉末X-光繞射分析顯示燒結之後的靶材確為Y3Fe5O12；而以脈衝雷射鍍製於GGG(111)(Gd3Ga5O12)基板上之薄膜，經X-光繞射分析後，確認為YIG(111)。
並列摘要
YIG（Y3Fe5O12） is a garnet material with broad applications in magneto-optical and memory devices, and the use is particularly important in the form of thin films. YIG thin films are frequently prepared by Pulsed Laser Deposition (PLD). The YIG targets used for deposition are synthesized by sintering yttrium oxide and iron oxide at high temperature. This paper describes the detailed procedures of YIG target making, including the raw materials, the proportionality, mixing and grinding of the materials, target pressing, high temperature synthesis, and the product analysis. Powder X-ray diffraction measurement confirms that the final product is indeed Y3Fe5O12. XRD scans on the films deposited by PLD onto GGG(111)(Gd3Ga5O12) substrates show the films are YIG(111).
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