PZT薄膜超音波元件之音場分析

張忠誠 ； 陳國雄

《中華民國振動與噪音工程學會論文集》 1997 (1997/05) Pp. 145-152

https://doi.org/10.30028/CSSVANNUAL.199705.0145

摘要

本實驗以眞空濺鍍技術製作高品質之PZT薄膜，配合積體電路製程技術完成PZT薄膜水下超音波發射及接收元件之製作，元件製作包括元件設計、矽基板蝕刻、薄膜成長（磁控濺鍍法）、金屬接線、極化及元件的包裝等，所得之元件在水槽中測試不同距離、不同電壓及不同頻率下超音波發射接收情形，同時進行元件之音場測試分析，音場測試每30°測一點，角度由-90°~90°，以實驗製作之水下超音波感測元件為發射端，水下麥克風為發射端，在水槽測量元件發射之指向性；在元件接收之特性方面，則以水下麥克風為發射端，自製元件為接收端，每30°測其接收之方向性。由實驗結果可知所製之PZT薄膜超音波元件在發射接收方面仍具有部份之指向性。

並列摘要

Sputtering technique and IC fabricating processes was used in this experiment to fabricate under water PZT thin film ultrasonic device. The fabrication produce, include device design, silicon substrate etch, PZT thin film deposition, eletrode deposition, poling and package, the sound field patterns was measured. the responses was measured per 30 degree from -90 degree to 90 degree. in transmission, measurement the fabricated PZT sensor was as a transmitter ＜ the hydrophone was as a receiver In receiving measurement the hydrophone was as a transmitter and the fabricated PZT sensor was as a receiver, from the results, it shows that the beams of the fabricated ultrasonic devices has prefer direction.