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低電阻金屬氧化物薄膜之研究
Study on the Low Electrical Resistivity Metal Oxide Thin Films
摘要
本論文是以多個金屬元素依照比例製成的合金靶材，再將靶材鍍製成合金薄膜，主要是研究合金氧化物薄膜其溫度與導電性質的影響，目的在於找尋最佳電阻的合金氧化薄膜。本論文使用到的靶材有CrFeCoNi、TiCo（下標 1.5）Ni（下標 1.5），再將靶材以高真空濺鍍機鍍製於經過1000℃氧化12小時的矽晶片上。製得的合金薄膜放置於真空高溫爐內，分別做500℃、600℃、700℃、800℃、900℃、1000℃ 30分鐘的退火處理，觀測合金薄膜退火處裡後其前後微結構變化以及退火前後電阻變化，選取CrFeCoNi 在600℃、700℃；TiCo1.5Ni1.5在800℃、900℃，最佳電阻的薄膜置於真空爐下再進行不同時間的熱處理，觀察不同合金氧化物薄膜的耐高溫能力。
並列摘要
This paper studied the CrFeCoNi,TiCo(subscript 1.5)Ni(subscript 1.5) alloy thin films. These thin films were produced by the high vacuum DC sputtering processing, and then, they were annealed in vacuum furnace under different temperatures to get the metal oxide thin films. Also, their microstructures and electrical properties of the metal were investigated. The goal of this study was evaluating the best annealing conditions of each alloy target, and their lowest electrical resistivity under this conditions.
延伸閱讀
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