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Search Symbol (Half-width) Description of Search Symbols
Space "AND" indicates the intertwining of key terms used in a search
Double Quotation Marks ("") ( " " ) Double quotation marks indicate the beginning and end of a phrase, and the search will only include terms that appear in the same order of those within the quotations. Example: "image process" : " image process "
? Indicates a variable letter. Entering two ? will indicate two variable letters, and so on. Example: "Appl?", search results will yield apple, apply… e , appl y … ( (often used to English word searches) )
* Indicates an unlimited number of variable letters to follow, from 1~n. Example: Enter "appl*", search results will yield apple, apples, apply, applied, application…(often used in English word searches) e , appl es , appl y , appl ied , appl ication … ( (often used to English word searches) )
AND、OR、NOT

Boolean logic combinations of key words is a skill used to expand or refine search parameters.
(1) AND (1) AND: Refines search parameters
(2) OR (2) OR: Expands search parameters (3) NOT: Excludes irrelevant parameters

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DOI stands for Digital Object Identifier ( D igital O bject I dentifier ) ,
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.

Using DOI as a persistent link

To create a persistent link, add「http://dx.doi.org/」 「 http://dx.doi.org/ 」 before a DOI.
For instance, if the DOI of an article is 10.5297/ser.1201.002 , you can link persistently to the article by entering the following link in your browser: http://dx.doi.org/ 10.5297/ser.1201.002
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.

Cite a document with DOI

When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.

DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registrationdoi.airiti.com ) 。

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  1. [1] M. Liu, G. Han, Y. Liu, C. Zhang, H. Wang, X. Li, J. Zhang, B. Cheng, and Y. Hao, "Undoped Ge0.92Sn0.08 Quantum Well PMOSFETs on (001), (011) and (111) Substrates with in Situ Si2H6 Passivation: High Hole Mobility and Dependence of Performance on Orientation," 2014 Symposium on VLSI Technology, pp. 1-2, 2014.
  2. [2] Y.-S. Huang, F.-L. Lu, Y.-J. Tsou, C.-E. Tsai, C.-Y. Lin, C.-H. Huang, and C. W. Liu, "First Vertically Stacked GeSn Nanowire pGAAFETs with Ion= 1850 μA/μm (Vov = Vds = -1V) on Si by GeSn/Ge CVD Epitaxial Growth and Optimum Selective Etching," 2017 IEEE International Electron Devices Meeting, pp. 37.5.1-37.5.4, 2017.
  3. [3] C. Schulte-Braucks, S. Glass, E. Hofmann, D. Stange, N. von den Driesch, J. M. Hartmann, Z. Ikonic, Q. T. Zhao, D.Buca, and S. Mantl, "Process Modules for GeSn Nanoelectronics with High Sn-contents," Solid-State Electronics, vol. 128, pp. 54-59, 2017.
  4. [4] H.-S. Lan, and C. W. Liu, "Band Alignments at Strained Ge1-xSnx/Relaxed Ge1-ySny Heterointerfaces," Journal of Physics D: Applied Physics, vol. 50, no. 13, p. 13LT02, 2017.
  5. [5] S. Wirths, D. Buca, and S. Mantl, "Si–Ge–Sn Alloys: From Growth to Application," Progress in crystal growth and characterization of materials, vol. 62, no. 1, pp. 1-39, 2016.
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