單層二硫化鉬沉積於高定向熱解石墨表面之原子排列與電子結構解析

呂俊毅

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單層二硫化鉬沉積於高定向熱解石墨表面之原子排列與電子結構解析

Investigation of the Orientation and Electronic Structure of Monolayer MoS2 on HOPG surface

呂俊毅 , Ph.D　　Advisor：林敏聰　　

英文

二硫化鉬；二維材料；半導體；掃描穿隧電子顯微鏡；掃描穿隧電子能譜摩爾紋；異質性結構；化學氣象沈積； MoS2 ； 2D Material ； Semiconductor ； Scanning Tunneling Microscopy ； Scanning Tunneling Spectroscopy ； Moir’e pattern ； Heterostructure ； CVD

Abstract │ Reference (277) │ Altmetrics

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MoS2, a two-dimensional semiconductor, yields intense interest and great potential for technological applications. Chemical vapor deposition (CVD) is an efficient method of developing micro-meter scale to atomically flat monolayer islands of MoS2.
In the present study, MoS2 grown by CVD process on graphite was examined by using atomic force and scanning tunneling microscopy/ spectroscopy (STM/STS) techniques. When the two different 2D crystal overlapping, lattice mismatch and relative rotational angle would lead to have a kind of superstructure, called moir’e pattern. By analyzing the moir’e patterns from several triangular MoS2 islands, we find that, there exists at least seven different superstructures and the relative rotational angles between the MoS2 adlayer and graphite substrate lattices are typically less than 5. According to this analysis, we conclude that since MoS2 grows at graphite step edges, it is the edge structure which controls the orientation of the islands, with whom grows from zig-zag (or armchair) edges tending to orient with one lattice vector parallel (perpendicular) to the step-edge. On the other hand, moir’e pattern could also affect the electronic structure of the heterostructure, due to the corrugation with periodical electron localization leads to additional long period of potential. It generates mini bands and the moir’e spots behave just like moir’e quantum well. In the series of STS measurements, we can conclude that, tunneling spectra of two superstructures of MoS2 are different. The difference is also found between moir’e hill and moir’e valley. These peaks could be related to the position within the single moir’e pattern. After considering the semiconductor property of MoS2, these states can be supposed as tip-induced quantum states, but influenced by moir’e pattern.

Reference ( 277 ) 〈TOP〉

[2] Yuanbo Zhang, Yan-Wen Tan, Horst L Stormer, and Philip Kim. Experimental Observation of the Quantum Hall Effect and Berry’s Phase in Graphene. Nature, 438(7065):201–204, November 2005.
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[5] Andre K. Geim. Nobel lecture: Random walk to graphene*. Rev. Mod. Phys.,
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