- 學位論文
用Abbe’s method 模擬光刻來尋找適當的參數以提升半導體良率
Simulate lithography with Abbe's method to find appropriate parameters to improve semiconductor yield
摘要
第一章主要說明我們光刻(lithography) 的重要性，為晶片帶來的性能提升，以及透過萊利公式(Rayleigh Criterion)，知道如何去縮小我們電晶體的電流通道，也就是晶片上的線寬。另外，介紹現今廣泛使用的光刻機，分別是深紫外線光刻(Deep Ultraviolet Lithography, DUVL) 和極紫外線光刻(Extreme Ultraviolet Lithography, EUVL)，解釋他們的差別。最後，說明此篇論文要模擬的方向和探討的目的。 第二章中，首先介紹半導體製程的完整過程，再來我們此篇論文主要去模擬光刻機的光學系統，所以去細講在上述半導體製程中的顯影(develop) 步驟，說明顯影的方式和成像的光學路徑，然後去細說影響成像的重要參數數值孔徑(Numerical Aperture, NA)。再來，會去提到透過 Abbe's method 得到的結論公式，說明它與我們光學成像過程的關係。最後，會講到奇異值分解法(singular value decomposition, SVD) 的公式，因為它是我們在後面第三章的計算推導過程中，所需用到的重要方法。 第三章主要是去細講從Abbe’s method到得到結論公式，之間的完整計算推導過程。透過以上的結論公式和MATLAB的結合，我們可以得到在xy平面圖上的強度分布圖，供下一章的模擬去使用並分析。 第四章主要是去模擬各項所需的參數值，然後對各參數得到的結果，去進行分析和比較。就是針對在不同的波長下，然後去調整數值孔徑值NA，觀察它平面上的強度分布和線寬，會產生什麼樣的變化，最後去比較和分析 第五章是根據以上的結果，經過分析和整理得出的結論。
關鍵字
光刻並列摘要
The first chapter mainly explains the importance of our lithography and the performance improvement it brings to the wafer. And through Riley's formula, we know how to reduce the current path of our transistor, literally the line width which is on the wafer. In addition, introduce the widely used lithography machines today, namely deep ultraviolet lithography and extreme ultraviolet lithography, and explain their differences. Finally, explain the direction and purpose of this paper to simulate. In the second chapter, we first introduced the complete process of the semiconductor process, and then this paper mainly simulated the optical system of the lithography machine, so we would discuss the development steps in the above semiconductor process in detail, and explained the development method and imaging optical path, and then went into detail about the important parameter numerical aperture that affects imaging. Next, I would mention the conclusion formula obtained through Abbe's method, explaining its relationship with our optical imaging process. Finally, the formula of the singular value decomposition method would be mentioned, because we needed it used in the calculation and derivation process in the third chapter. The third chapter mainly discussed the complete calculation and derivation process from Abbe's method to the conclusion formula. Through the combination of the above conclusion formula and MATLAB, we could get the intensity distribution map on the XY plane, which could be used and analyzed for the simulation in the next chapter. The fourth chapter is mainly to simulated the required parameter values, which was to adjust the numerical aperture value for different wavelengths, observed the changes of the intensity distribution and line width, and finally compared and analyzed The fifth chapter was the conclusion based on the above results.