星狀高分子及其電子施體授體摻合物應用於非揮發有機電晶體式記憶體元件之電荷儲存層

陳姿穎

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星狀高分子及其電子施體授體摻合物應用於非揮發有機電晶體式記憶體元件之電荷儲存層

Nonvolatile Organic Transistor Memory Devices using Chargeable Gate Dielectrics of Star-branched Polymers and Their Donor/Acceptor Blends

陳姿穎 , Masters　　Advisor：陳文章　　

英文

電晶體型記憶體；介電儲存層；星狀高分子；電子施體授體；電荷轉移； transistor memory ； gate dielectric ； star-branched polymer ； donor-acceptor ； charge transfer

Abstract │ Reference (44) │ Altmetrics

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Organic nonvolatile transistor memory devices have attracted extensive research interest for flexible electronics in recent years. The function of charge storages arises from the chargeable gate dielectrics, an additional polymer dielectric (electret) layer between a semiconductor layer and gate contact. However, the electrets of star-branched electroactive polymers and their donor-acceptor blends have not been fully explored yet. In this thesis, we explore the transistor memory devices using electrets of star-branched polymers with pendent conjugated fluorene or triphenylamine group and their [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) blends, as described in the following:
  1.	Nonvolatile Transistor Memories of Pentacence Using the Electrets of Star-branched Styrene-Fluorene Polymers and Their PCBM Blends (chapter 2):  Pentacene based nonvolatile transistor memory devices are studied using the electrets of hole-transporting four-armed star polymers of polystyrene para-substituted oligofluorenes (P(StFl)4) and their blends with electron-transporting PCBM. The low dielectric constant of P(StFl)4 leads to the greater loaded electric field and results in a memory window. The donor-acceptor blends of P(StFl)4 with [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) are used to realize the hole/electron storage in OFET memory devices. The hole mobility and memory windows are improved up to 1.04 cm2 V-1 s-1 and 35.59 V, respectively, using the electrets of the PCBM:P(StFl)4. The responding ON and OFF currents of the devices are maintained over 100 cycle with a high ON/OFF current ratio of 106. The charge storage mechanism is proposed for PCBM:P(StFl)4 based memories, including carrier trapping and tunneling effect under a gate electric field.
  2.	Nonvolatile Organic Transistor Memory Devices Using Electrets of Star-Shaped poly[4-(diphenylamino)benzyl methacrylate]/PCBM Blends(chapter 3):
The organic nonvolatile transistor memory devices of the n-type semiconductor, N,N’-bis(2-phenylethyl)-perylene-3,4:9,10-tetracarboxylic diimide (BPE-PTCDI), are prepared using the blends of three-armed star-shaped poly[4-(diphenylamino)benzyl methacrylate] (N(PTPMA)3) and organic compounds  (PCBM, TIPS-pen, Ferrocene) as electret. As utilized the N(PTPMA)3/PCBM blends, the device turns to a flash type memory with increased PCBM composition and could be operated repeatedly based on the tunneling process. The large shift of the reversible transfer curves and hysteresis after gate bias indicates the significance of electron charge storage. According to this mechanism, we also carried out the comparative study of the electret of N(PTPMA)3/TIPS-pen and N(PTPMA)3/Ferrocene to explore the effect of organic compounds in terms of energy-band diagram. And the data-storage types of memory could be adjusted by electrets of blends and further selecting the organic compound. In addition, all memory devices exhibit nice stability of long retention over 104 s and optimized ones could maintain the repeat cycle over 140 times for write-read-erase-read (WRER) or highly stable read-out current for WORM characteristics.
  The above results demonstrate that the electrets using star-shaped polymers and their donor-acceptor blends can enhance the carrier mobility and memory window for high-performance nonvolatile OFET memories.

Reference ( 44 ) 〈TOP〉

[2] Y. Guo, G. Yu, Y. Liu, Adv. Mater. 2010, 22, 4427.
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[5] H. S. Jana Zaumseil, Chem. Rev. 2007, 107, 1296.
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[23] K. S. S. Y. Yang, C. E. Park, Advanced Functional Materials 2005, 15, 1806.
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[26] H. Sirringhaus, Adv. Mater. 2005, 17, 2411.
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[27] K.-J. Baeg, Y.-Y. Noh, H. Sirringhaus, D.-Y. Kim, Adv. Funct. Mater. 2010, 20, 224.
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