stands for Digital Object Identifier
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.
Using DOI as a persistent link
To create a persistent link, add「http://dx.doi.org/」
before a DOI.
For instance, if the DOI of an article is 10.5297/ser.1201.002 , you can link persistently to the article by entering the following link in your browser: http://dx.doi.org/ 10.5297/ser.1201.002 。
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.
Cite a document with DOI
When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.
DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registration （ doi.airiti.com ） 。
張嘉華 , Ph.D Advisor：胡振國
英文 DOI： 10.6342/NTU.2009.00605
-  S. I. Hsieh, H. T. Chen, Y. C. Chen, C. L. Chen, J. X. Lin, and Y. C. King, “Reliability and Memory Characteristics of Sequential Laterally Solidified Low Temperature Polycrystalline Silicon Thin Film Transistors with an Oxide–Nitride–Oxide Stack Gate Dielectric,” Japanese Journal of Applied Physics, vol. 45, no. 4B, pp. 3154–3158, 2006.
-  S. Higashi, D. Abe, Y. Hiroshima, K. Miyashita, T. Kawamura, S. Inoue, and T. Shimoda, “High-Quality SiO2/Si Interface Formation and Its application to Fabrication of Low-Temperature-Processed Polycrystalline Si Thin-Film Transistor,” Japanese Journal of Applied Physics, vol. 41, no. 6A, pp. 3646–3650, 2002.
-  S. Sivoththaman, P. D. Schepper, W. Laureys, J. F. Nijs, and R. P. Mertens, “Improving Low-Temperature APCVD SiO2 Passivation by Rapid Thermal annealing for Si Devices,” IEEE Electron Device Lett., vol. 19, no. 12, pp. 505-507, Dec. 1998.
-  L. Pichon, F. Raoult, and O. Bonnaud, “Comparison of the low temperature (≦600 ℃) polysilicon thin film transistors (TFTs) with two kinds of gate dielectrics,” Materials Chemistry and Physics, vol. 39, pp. 313-316, 1995.
-  D. Brassard, L. Ouellet, and M. A. El Khakani, “Room-Temperature Deposited Titanium Silicate Thin Films for MIM Capacitor Applications,” IEEE Electron Device Lett., vol. 28, no. 4, pp. 261-263, April 2007.
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